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STMicroelectronics High Voltage 5 A NPN Bipolar Transistor, 800 V, 3-Pin TO-220 BUL38D

Category Bipolar Transistors Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 28.9mm
Length 10.4mm
Model BUL38D
Width 4.6mm
Mount Type Through Hole
Series BUL38D
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 800V
Minimum DC Current Gain hFE 12
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 9V
Maximum Collector Base Voltage VCBO 800V
Maximum Power Dissipation Pd 80W
Maximum DC Collector Current Idc 5A
Transistor Configuration Single
STMicroelectronics BUL216 Transistor, 4 A NPN, 800 V, 3-Pin TO-220Brand STMicroelectronics

Key Features

  • This transistor features a TO-220 3-pin package suitable for through-hole mounting.
  • Provides maximum power dissipation of 80 W ensuring reliable performance in demanding thermal conditions.
  • Operational temperature ranges from -65°C to 150°C for versatile industrial use.
  • Designed with a minimum DC current gain (hFE) of 12 for effective amplification.
  • Ideal for applications requiring high voltage and high current switching.
  • Complies with RoHS environmental standards.
  • Compact dimensions of length 10.4 mm, width 4.6 mm, and height 28.9 mm enable easy integration into circuits.

Product Description

STMicroelectronics BUL38D is a high voltage NPN bipolar transistor engineered for discrete semiconductor applications requiring high current and voltage handling capabilities. The transistor supports a maximum DC collector current of 5 A and a collector-emitter voltage (Vceo) of 800 V, making it suitable for robust industrial and power electronics uses.

Packaged in a standard TO-220 3-pin format, this device facilitates through-hole mounting and effective heat dissipation. It withstands operation from -65°C to 150°C, providing consistent performance across a wide temperature spectrum which is critical for industrial, manufacturing, and automotive electronics environments.

This transistor features a minimum DC current gain (hFE) of 12 and a maximum power dissipation of 80 W, ensuring efficient switching and amplification in high power circuits. The maximum collector-base voltage (VCBO) and emitter-base voltage (VEBO) are rated at 800 V and 9 V respectively, enhancing its reliability in demanding applications.

Compact dimensions (10.4 mm length, 4.6 mm width, and 28.9 mm height) support versatile PCB design and installation. The component fully complies with RoHS standards, endorsing environmentally responsible manufacturing.

TO-220 3-pin package for through-hole mounting that provides reliable mechanical and thermal properties. High voltage capability with collector-emitter voltage up to 800 V and collector current up to 5 A for power electronics.

Wide operating temperature range from -65°C to 150°C for durability in various ambient conditions. Minimum current gain of 12 assures stable amplification performance. Power dissipation rating of 80 W supports high power operation without thermal failure.

RoHS compliant ensuring adherence to environmental standards. Compact dimensions facilitating seamless integration into electronic assemblies.

This transistor is widely used in industrial, electronic manufacturing, automotive, and power control applications where durable and high voltage NPN switching is required. For further detailed technical documentation, datasheets and design resources are available through STMicroelectronics.

Explore the wide range of discrete semiconductor components and Bipolar Transistors on EnvMart to match your precise engineering requirements.

STMicroelectronics High Voltage 5 A NPN Bipolar Transistor, 800 V, 3-Pin TO-220 BUL38D
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this model is 800 V.

This transistor can handle a maximum DC collector current of 5 A.

The maximum power dissipation rating for this model is 80 W.

The dimensions of this transistor are 10.4 mm in length, 4.6 mm in width, and 28.9 mm in height.

This model operates within a temperature range of -65°C to 150°C.

The minimum DC current gain (hFE) for this transistor is 12.

The BUL38D is packaged in a standard TO-220 3-pin format suitable for through-hole mounting.

Yes, this model complies with RoHS environmental standards.

The maximum emitter-base voltage (VEBO) for this transistor is 9 V.

This transistor is widely used in industrial, electronic manufacturing, automotive, and power control applications.

The transistor polarity of this model is NPN.

The country of origin for the BUL38D is India.

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