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Taiwan Semiconductor 1-Element Uni-Directional TVS Diode 600W 2-Pin DO-214 SMBJ85A
Specifications
| Country of Origin | India |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 2.45mm |
| Length | 4.75mm |
| Model | SMBJ85A |
| Width | 3.95mm |
| Mount Type | Surface |
| Series | SMBJ |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-214 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | FBI |
| Pin Count | 2 |
| Number of Elements per Chip | 1 |
| Clamping Voltage VC | 137V |
| Diode Configuration | Single |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 94.4V |
| Maximum Reverse Stand-off Voltage Vwm | 85V |
| Peak Pulse Power Dissipation Pppm | 600W |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 4.4A |
| Maximum Reverse Leakage Current | 5μA |
Key Features
- This diode features a single-element, uni-directional configuration for targeted voltage suppression.
- It has a minimum breakdown voltage of 94.4V ensuring stable operation under surge conditions.
- The device supports a maximum peak pulse power dissipation of 600 watts enhancing transient surge resilience.
- The clamping voltage is rated at 137V for effective voltage spike control.
- Operating temperature ranges from -55°C to 150°C for reliability in harsh environments.
- The diode's surface mount DO-214 package has dimensions 4.75mm length, 3.95mm width, and 2.45mm height facilitating PCB space efficiency.
- Maximum peak pulse current of 4.4A supports high transient current absorption.
- The device exhibits low reverse leakage current of 5μA contributing to minimal power loss.
Product Description
Taiwan Semiconductor SMBJ85A is a high-performance 1-element, uni-directional transient voltage suppressor (TVS) diode designed for efficient protection of sensitive electronic components from transient voltage spikes and surges. Rated at 600 watts peak pulse power, this diode features a 2-pin DO-214 surface mount package, making it suitable for compact circuit board designs.
With a minimum breakdown voltage of 94.4 volts and a maximum reverse stand-off voltage of 85 volts, this TVS Diode offers robust protection for a wide range of power electronics applications. Its clamping voltage of 137 volts and peak pulse current capability of 4.4 amperes ensure reliable voltage suppression during transient events.
The diode operates reliably across a broad temperature range from -55°C to 150°C, allowing use in demanding industrial and commercial environments. Its glass-passivated junction construction provides fast response times and low incremental surge resistance.
Key physical dimensions include a length of 4.75 mm, width of 3.95 mm, and height of 2.45 mm, optimized for surface mount technology (SMT) applications. The device maintains a low maximum reverse leakage current of 5 microamperes, contributing to energy efficiency in sensitive circuits.
This product is ideal for use in industrial electronics, power management systems, telecommunication equipment, and consumer electronic devices needing transient voltage spike protection. The SMBJ series from Taiwan Semiconductor provides industry-standard reliability with FBI certifications and compliance with applicable semiconductor standards.
This diode features a single-element, uni-directional configuration for targeted voltage suppression. It has a minimum breakdown voltage of 94.4V ensuring stable operation under surge conditions. The device supports a maximum peak pulse power dissipation of 600 watts enhancing transient surge resilience.
The clamping voltage is rated at 137V for effective voltage spike control. Operating temperature ranges from -55°C to 150°C for reliability in harsh environments. The diode's surface mount DO-214 package has dimensions 4.75mm length, 3.95mm width, and 2.45mm height facilitating PCB space efficiency.
Maximum peak pulse current of 4.4A supports high transient current absorption. The device exhibits low reverse leakage current of 5μA contributing to minimal power loss. This diode complies with FBI standards and is not designed for automotive applications.
Explore the Taiwan Semiconductor SMBJ series and other discrete semiconductor components in the Electronics & Electricals category at EnvMart for comprehensive power protection solutions.
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Frequently Asked Questions
The SMBJ85A diode supports a maximum peak pulse power dissipation of 600 watts, enhancing its resilience to transient surges.
It has a minimum breakdown voltage of 94.4 volts, ensuring stable operation under surge conditions.
The DO-214 package of this model has dimensions of 4.75 mm in length, 3.95 mm in width, and 2.45 mm in height.
The clamping voltage is rated at 137 volts, providing effective control of voltage spikes.
The maximum reverse stand-off voltage for the SMBJ85A is 85 volts.
It can handle a maximum peak pulse current of 4.4 amperes, supporting high transient current absorption.
The diode operates reliably across a temperature range from -55°C to 150°C, suitable for harsh environments.
The SMBJ85A exhibits a low maximum reverse leakage current of 5 microamperes, contributing to minimal power loss.
This model features a single-element, uni-directional configuration for targeted voltage suppression.
The diode complies with FBI standards, ensuring it meets applicable semiconductor regulations.
It is suitable for use in industrial electronics, power management systems, telecommunication equipment, and consumer electronic devices needing transient voltage spike protection.
This diode is designed for surface mount technology (SMT), making it suitable for compact circuit board designs.
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