Taiwan Semiconductor 1-Element Uni-Directional TVS Diode 600 W, 2-Pin DO-214 SMBJ40A

Taiwan Semiconductor SMBJ40A is a 1-Element Uni-Directional TVS Diode rated for 600 W peak pulse power dissipation, designed to protect electronic systems against voltage transients and surges. Packaged in a surface mount DO-214 form factor, this diode offers compact size and reliable integration for modern printed circuit boards. The diode features a single element configuration with a minimum breakdown voltage of 44.4 V and a clamping voltage of 64.5 V, delivering precise voltage suppression under transient conditions.

Operating reliably across a wide temperature range from -55°C to 150°C, the SMBJ40A is suitable for use in demanding industrial, automotive, and consumer electronic applications. Its low maximum reverse leakage current of 5 μA reduces power loss while ensuring optimal protection. Additionally, the diode withstands a maximum peak pulse current of 9.3 A, enabling it to absorb sudden high-energy voltage spikes without damage.

The glass-passivated junction design of the SMBJ40A ensures long-term stability and consistent performance in transient voltage suppression. Its compact measurements of 4.57 mm length, 3.94 mm width, and 2.237 mm height facilitate use in high-density electronic assemblies. This diode complies with FBI industry standards and is classified with a UL94V-0 flammability rating, highlighting its safety and quality standards.

Applications include protection for power supplies, automotive electronics, telecom equipment, industrial control systems, and other sensitive semiconductor devices prone to damage from transient voltage events. Its robust build and excellent clamping characteristics make it an essential component for safeguarding modern electronic systems.

Uni-directional diode configuration ensures reliable surge protection. Surface mount DO-214 package for easy PCB integration. Minimum breakdown voltage of 44.4 V provides excellent transient voltage suppression. Peak pulse current rating of 9.3 A allows high surge handling capability.

Operating temperature range from -55°C to 150°C ensures durability in harsh environments. Low maximum reverse leakage current of 5 μA enhances efficiency. Compact dimensions of 4.57 mm length, 3.94 mm width, and 2.237 mm height.

Glass-passivated junction design for stable performance and longevity. Complies with relevant industry standards for high safety and reliability. Ideal for protecting sensitive semiconductor and electronic devices in industrial and automotive applications.

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