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| Country of Origin | India |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 2.237mm |
| Length | 4.57mm |
| Model | SMBJ100CA |
| Width | 3.94mm |
| Mount Type | Surface |
| Series | SMBJ |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-214 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | FBI |
| Pin Count | 2 |
| Number of Elements per Chip | 1 |
| Clamping Voltage VC | 162V |
| Diode Configuration | Single |
| Direction Type | Bi-Directional |
| Minimum Breakdown Voltage Vbr | 111V |
| Maximum Reverse Stand-off Voltage Vwm | 100V |
| Peak Pulse Power Dissipation Pppm | 600W |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 3.7A |
| Maximum Reverse Leakage Current | 5μA |
Taiwan Semiconductor SMBJ100CA is a 1-element bi-directional transient voltage suppressor diode designed to protect sensitive electronics against voltage spikes and transients. It delivers a peak pulse power dissipation of 600 W, ideal for safeguarding circuits from high-energy transient surges in industrial, commercial, and consumer electronic applications.
The diode features a single device configuration and a bi-directional voltage suppression capability, enabling it to clamp voltage surges effectively in both directions. Its surface mount DO-214 package makes it compact and suitable for advanced PCB assembly processes.
This TVS diode has a minimum breakdown voltage of 111 V and a maximum reverse stand-off voltage of 100 V, ensuring that the diode does not conduct under normal operating voltages but activates instantly during transient events. The clamping voltage of 162 V provides reliable protection by limiting voltage spikes to safe levels.
Operating within a temperature range of -55°C to 150°C, this diode is engineered to perform reliably in harsh environmental conditions. It can handle a maximum peak pulse current of 3.7 A, suitable for transient current spikes during switching or lightning events.
The device is characterized by low reverse leakage current of 5 μA, minimizing power loss when in standby condition. It meets FBI industry standards but is not qualified for automotive applications.
The compact dimensions - 4.57 mm length, 3.94 mm width, and 2.237 mm height - ensure space-saving design in electronic assemblies. This diode is recommended for use in power management, industrial electronics, and general protection of sensitive semiconductor devices.
The diode configuration is single for precise protection. Bi-directional direction type supports dual polarity voltage spikes. Surface mount type with a DO-214 package ensures easy PCB integration. Minimum breakdown voltage is 111 V with a maximum reverse stand-off voltage of 100 V.
Clamping voltage is rated at 162 V for effective transient voltage clamping. Operates reliably within -55°C to 150°C temperature range. Maximum peak pulse current of 3.7 A ensures high surge current handling. Compact device dimensions with 4.57 mm length, 3.94 mm width, and 2.237 mm height.
Maximum reverse leakage current is low at 5 μA to minimize standby losses. Complies with FBI standards but is not automotive grade. Explore the complete range of TVS Diodes and Semiconductor protection components at EnvMart for industrial, manufacturing, and electrical applications.
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