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Taiwan Semiconductor 1-Element Bi-Directional TVS Diode 600 W, 2-Pin DO-214 SMBJ100CA

Category TVS Diode Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin India
Brand Taiwan Semiconductor
Height 2.237mm
Length 4.57mm
Model SMBJ100CA
Width 3.94mm
Mount Type Surface
Series SMBJ
Maximum Operating Temperature 150°C
Package Type DO-214
Minimum Operating Temperature -55°C
Standards/Approvals FBI
Pin Count 2
Number of Elements per Chip 1
Clamping Voltage VC 162V
Diode Configuration Single
Direction Type Bi-Directional
Minimum Breakdown Voltage Vbr 111V
Maximum Reverse Stand-off Voltage Vwm 100V
Peak Pulse Power Dissipation Pppm 600W
Test Current It 1mA
Maximum Peak Pulse Current Ippm 3.7A
Maximum Reverse Leakage Current 5μA

Key Features

  • The diode configuration is single for precise protection.
  • Bi-directional direction type supports dual polarity voltage spikes.
  • Surface mount type with a DO-214 package ensures easy PCB integration.
  • Minimum breakdown voltage is 111 V with a maximum reverse stand-off voltage of 100 V.
  • Clamping voltage is rated at 162 V for effective transient voltage clamping.
  • Operates reliably within -55°C to 150°C temperature range.
  • Maximum peak pulse current of 3.7 A ensures high surge current handling.
  • Compact device dimensions with 4.57mm length, 3.94mm width, and 2.237mm height.

Product Description

Taiwan Semiconductor SMBJ100CA is a 1-element bi-directional transient voltage suppressor diode designed to protect sensitive electronics against voltage spikes and transients. It delivers a peak pulse power dissipation of 600 W, ideal for safeguarding circuits from high-energy transient surges in industrial, commercial, and consumer electronic applications.

The diode features a single device configuration and a bi-directional voltage suppression capability, enabling it to clamp voltage surges effectively in both directions. Its surface mount DO-214 package makes it compact and suitable for advanced PCB assembly processes.

This TVS diode has a minimum breakdown voltage of 111 V and a maximum reverse stand-off voltage of 100 V, ensuring that the diode does not conduct under normal operating voltages but activates instantly during transient events. The clamping voltage of 162 V provides reliable protection by limiting voltage spikes to safe levels.

Operating within a temperature range of -55°C to 150°C, this diode is engineered to perform reliably in harsh environmental conditions. It can handle a maximum peak pulse current of 3.7 A, suitable for transient current spikes during switching or lightning events.

The device is characterized by low reverse leakage current of 5 μA, minimizing power loss when in standby condition. It meets FBI industry standards but is not qualified for automotive applications.

The compact dimensions - 4.57 mm length, 3.94 mm width, and 2.237 mm height - ensure space-saving design in electronic assemblies. This diode is recommended for use in power management, industrial electronics, and general protection of sensitive semiconductor devices.

The diode configuration is single for precise protection. Bi-directional direction type supports dual polarity voltage spikes. Surface mount type with a DO-214 package ensures easy PCB integration. Minimum breakdown voltage is 111 V with a maximum reverse stand-off voltage of 100 V.

Clamping voltage is rated at 162 V for effective transient voltage clamping. Operates reliably within -55°C to 150°C temperature range. Maximum peak pulse current of 3.7 A ensures high surge current handling. Compact device dimensions with 4.57 mm length, 3.94 mm width, and 2.237 mm height.

Maximum reverse leakage current is low at 5 μA to minimize standby losses. Complies with FBI standards but is not automotive grade. Explore the complete range of TVS Diodes and Semiconductor protection components at EnvMart for industrial, manufacturing, and electrical applications.

Taiwan Semiconductor 1-Element Bi-Directional TVS Diode 600 W, 2-Pin DO-214 SMBJ100CA
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Frequently Asked Questions

The peak pulse power dissipation of this model is rated at 600 W, making it suitable for protecting circuits from high-energy transient surges.

The clamping voltage is rated at 162 V, which helps in effectively limiting voltage spikes to safe levels during transient events.

It operates reliably within a temperature range of -55°C to 150°C, allowing it to function in harsh environmental conditions.

This model has compact dimensions of 4.57 mm in length, 3.94 mm in width, and 2.237 mm in height, making it suitable for space-saving designs in electronic assemblies.

The maximum reverse stand-off voltage is 100 V, ensuring that the diode does not conduct under normal operating voltages.

It can handle a maximum peak pulse current of 3.7 A, which is suitable for transient current spikes during switching or lightning events.

The diode comes in a surface mount DO-214 package, which facilitates easy integration into PCB assemblies.

The minimum breakdown voltage is 111 V, allowing the diode to activate during transient events while remaining inactive under normal conditions.

The maximum reverse leakage current is low at 5 μA, which helps minimize power loss when the diode is in standby condition.

This model has a single element configuration, providing precise protection against voltage spikes.

It meets FBI industry standards, ensuring it adheres to specific performance and safety criteria, but it is not qualified for automotive applications.

This model supports a bi-directional direction type, enabling it to clamp voltage surges effectively in both directions.

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