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STMicroelectronics NPN Darlington Transistor 12 A, 100 V, 33 W Power Dissipation, 3-Pin TO-220 BDW93CFP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | BDW93CFP |
| Mount Type | Through Hole |
| Series | BDW93CFP |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 12A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 5mA |
| Maximum Power Dissipation Pd | 33W |
| STMicroelectronics BDW93CFP 1 Darlington Transistor NPN, 12 A 100 V HFE | 100, 3-Pin TO-220 |
Key Features
- This transistor has a maximum continuous collector current of 12 A.
- It supports a maximum collector-emitter voltage of 100 V.
- The transistor package is a durable TO-220 with three pins for through-hole mounting.
- Minimum DC current gain (hFE) is 100 ensuring effective amplification.
- Maximum power dissipation is 33 W, suitable for demanding power control.
- Operating temperature range extends from -65°C to 150°C, ensuring reliability in harsh environments.
- Emitter-base voltage maximum rating is 5 V, with collector-base voltage also rated at 100 V.
- The saturation voltage (VceSAT) is a maximum of 2 V improving switching efficiency.
Product Description
The STMicroelectronics BDW93CFP is a high-performance NPN Darlington transistor designed to handle continuous collector currents up to 12 amperes and collector-emitter voltages up to 100 volts. Ideal for use in power amplification, switching, and control applications, the transistor features a robust TO-220 package with three pins arranged for easy through-hole mounting on PCBs.
It offers a minimum DC current gain (hFE) of 100, ensuring effective amplification for industrial and electronic applications. With a maximum power dissipation of 33 watts, it can sustain substantial loads without overheating, supported by an operating temperature range from -65°C to 150°C to maintain stability even in demanding thermal environments.
The device includes maximum ratings for emitter-base voltage of 5 volts and collector-base voltage of 100 volts, with a saturation voltage (VceSAT) capped at 2 volts to optimize switching performance. Its compact dimensions of 10.4 mm length and 16.4 mm height support efficient space management on circuit boards.
This transistor is manufactured as a single-element chip with NPN polarity, making it suitable for various industrial control, laboratory, and manufacturing uses where high current and voltage handling are required.
Maximum continuous collector current: 12 A. Maximum collector-emitter voltage: 100 V. Package type: TO-220, through-hole mount. Pin count: 3. Minimum DC current gain (hFE): 100. Maximum power dissipation: 33 W. Operating temperature range: -65°C to 150°C.
Emitter base voltage max: 5 V. Collector base voltage max: 100 V. Compact dimensions: 10.4 mm (length) x 16.4 mm (height).
The BDW93CFP transistor is predominantly used in electronic components for power control circuits, industrial automation, audio amplification, and as an essential component in discrete semiconductors modules. It provides reliable performance in power supplies, motor controls, and switching regulators.
Select STMicroelectronics BDW93CFP for your next high-current transistor application with assured quality and durability. Explore more Darlington Transistor options and semiconductor components in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous collector current for this model is 12 A.
It supports a maximum collector-emitter voltage of 100 V.
The maximum power dissipation for this transistor is 33 W.
The minimum DC current gain (hFE) is 100, ensuring effective amplification.
The operating temperature range extends from -65°C to 150°C.
This model comes in a TO-220 package, designed for through-hole mounting.
The dimensions are 10.4 mm in length and 16.4 mm in height.
The maximum emitter-base voltage rating is 5 V.
It is suitable for power amplification, switching, and control applications in industrial automation and audio amplification.
The maximum collector-base voltage is also rated at 100 V.
This transistor has a pin count of 3.
The maximum collector cut-off current is 5 mA.
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