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Nexperia High Voltage NPN Transistor 100 mA, 250 V, 1.2 W Power Dissipation, 4-Pin SOT-223 BF722,115
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | BF722,115 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | BF722 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 250V |
| Minimum DC Current Gain hFE | 50 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 250V |
| Maximum Power Dissipation Pd | 1.2W |
| Maximum DC Collector Current Idc | 100mA |
| Transistor Configuration | Single |
Key Features
- Designed for high voltage and low current applications.
- Can dissipate up to 1.2 W power safely.
- Operates efficiently with a DC current gain (hFE) of minimum 50.
- Compact 4-pin SOT-223 package suitable for surface mounting.
- Wide operating temperature range from -65°C to 150°C.
- Maximum collector base voltage and collector emitter voltage rated at 250 V.
- Emitter base voltage max of 5 V ensures device stability.
- Ideal for switching and amplification in industrial and electronic circuits.
Product Description
Nexperia BF722,115 is a high voltage NPN bipolar transistor designed for low current applications up to 100 mA and high voltage up to 250 V. It features a compact 4-pin SOT-223 surface-mount package, enabling efficient PCB space utilization in electronic devices and industrial equipment.
This transistor supports a maximum power dissipation of 1.2 W, making it suitable for moderate power switching and amplification tasks. With a minimum DC current gain (hFE) of 50, it provides reliable performance in signal processing and control circuitry.
The device operates across a wide temperature range from -65°C to 150°C, ensuring stable functionality in demanding environments such as automotive electronics, industrial control systems, and telecommunications equipment.
The maximum ratings include a collector-emitter voltage (Vceo) and collector-base voltage (Vcbo) of 250 V and an emitter-base voltage (Vebo) of 5 V. These parameters make it ideal for high voltage switching applications requiring voltage tolerance and reliability.
High voltage transistor for efficient switching. Compact 4-pin SOT-223 surface-mount package. Minimum current gain (hFE) of 50 for amplification. Power dissipation of 1.2 W suitable for moderate loads. Wide operating temperature range from -65°C to 150°C.
Maximum collector current of 100 mA. Suitable for industrial, automotive, and electronic applications.
This Nexperia bipolar transistor is a reliable choice for designers needing a high-voltage transistor with moderate current capacity in a compact footprint. The surface mount package and industrial-grade specifications make it compatible with automated manufacturing and harsh operating conditions.
Explore the full range of Nexperia semiconductors and Bipolar Transistors at EnvMart for industrial, laboratory, manufacturing, and electronics development projects.
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Frequently Asked Questions
The maximum collector current for this NPN transistor is 100 mA.
This model has a maximum power dissipation rating of 1.2 W.
It operates efficiently within a temperature range of -65°C to 150°C.
The transistor comes in a compact 4-pin SOT-223 surface-mount package.
The maximum collector-emitter voltage (Vceo) and collector-base voltage (Vcbo) are both rated at 250 V, while the maximum emitter-base voltage (Vebo) is 5 V.
The minimum DC current gain (hFE) for this model is 50.
This unit uses a single transistor configuration.
Yes, it is designed for high voltage applications with a maximum voltage rating of 250 V.
The dimensions are as follows: height is 1.8 mm, width is 3.7 mm, and length is 6.7 mm.
The country of origin for this product is India.
It is suitable for switching and amplification tasks in industrial and electronic circuits.
This model is designed for surface mounting.
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