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Nexperia Bipolar NPN Transistor 100 mA 250 V 1.2 W Surface Mount SOT-223 4-Pin BF722,115
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | BF722,115 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | BF722 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 250V |
| Minimum DC Current Gain hFE | 50 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 250V |
| Maximum Power Dissipation Pd | 1.2W |
| Maximum DC Collector Current Idc | 100mA |
| Transistor Configuration | Single |
| onsemi NSV40301MZ4G NPN Transistor, 3 A, 40 V, 3 + Tab-Pin SOT-223Brand | ON Semiconductor |
Key Features
- Supports maximum power dissipation of 1.2 W for handling moderate power loads.
- Minimum DC current gain (hFE) of 50 ensures stable amplification performance.
- Operates reliably from -65°C up to 150°C for extended temperature range applications.
- Single transistor configuration with NPN polarity suitable for switching and amplification circuits.
- 4-pin surface mount package allows efficient automated PCB assembly.
Product Description
The Nexperia BF722,115 is a bipolar NPN transistor designed for high voltage switching and amplification tasks in electronic circuits. Featuring a maximum DC collector current of 100 mA and a collector emitter voltage rating of 250 V, this transistor supports demanding applications where performance and reliability are crucial.
Its surface mount SOT-223 package comprises 4 pins, providing a compact footprint ideal for automated PCB assembly and dense circuit layouts. The transistor can handle power dissipation up to 1.2 W, making it suitable for moderate power tasks in industrial, consumer electronics, and power management domains.
The device maintains stable operation over an extended temperature range from -65°C to +150°C, enhancing its suitability for harsh and variable environments. Additionally, it offers a minimum DC current gain (hFE) of 50, supporting efficient signal amplification with low distortion.
Key physical dimensions include 6.7 mm length, 3.7 mm width, and 1.8 mm height, facilitating integration into compact devices and assemblies. Maximum DC collector current of 100 mA. Collector emitter voltage rating of 250 V.
Power dissipation of up to 1.2 W. Operational temperature range from -65°C to +150°C. 4-Pin SOT-223 surface mount package. NPN transistor polarity with single configuration.
Commonly used in electronic component assemblies for signal amplification, switching circuits, and power control, this transistor is designed to meet industrial and commercial electronics standards. Its robustness and compact form factor make it ideal for telecommunications, instrumentation, and general electronic manufacturing.
EnvMart offers this Nexperia BF722,115 transistor as part of its comprehensive semiconductor catalog, supporting engineers and designers targeting reliable and high-performance electronic solutions.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum collector emitter voltage (Vceo) for this model is 250 V, making it suitable for high voltage applications.
This transistor can handle a maximum power dissipation of 1.2 W, allowing it to manage moderate power loads effectively.
It operates reliably within a temperature range of -65°C to +150°C, which enhances its suitability for harsh environments.
The minimum DC current gain (hFE) for the BF722,115 is 50, ensuring stable amplification performance in circuits.
The dimensions of the SOT-223 package are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height, facilitating compact integration.
This unit utilizes a single transistor configuration with NPN polarity, suitable for both switching and amplification circuits.
The maximum DC collector current (Idc) for this transistor is 100 mA, which supports various electronic applications.
It is commonly used in electronic component assemblies for signal amplification, switching circuits, and power control.
The BF722,115 features a 4-pin configuration, which is typical for surface mount devices.
The maximum emitter base voltage (VEBO) for this transistor is 5 V, ensuring it operates within safe limits.
This transistor is manufactured in India, which is noted in its specifications.
It comes in a SOT-223 package type, which is designed for efficient automated PCB assembly.
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