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STMicroelectronics High Voltage PNP Transistor 3-Pin SOT-23, -500 mA, -500 V STR2550

Category Bipolar Transistors Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 1.4mm
Length 3.04mm
Model STR2550
Width 3mm
Mount Type Surface
Series STR
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo -500V
Minimum DC Current Gain hFE 10
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -7V
Maximum Collector Base Voltage VCBO -500V
Maximum Power Dissipation Pd 500mW
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single

Key Features

  • Maximum collector current of -500 mA ensures effective handling of moderate power applications.
  • Maximum collector-emitter voltage of -500 V supports high voltage operations.
  • Compact 3-pin SOT-23 surface mount package allows space-efficient PCB layouts.
  • Minimum DC current gain hFE of 10 provides reliable amplification performance.
  • Maximum power dissipation rating of 500 mW ensures safe operational limits.
  • Maximum operating temperature up to 150°C allows stable use in elevated temperature environments.
  • Transistor configuration is single PNP enhancing versatility in designs.

Product Description

The STMicroelectronics STR2550 is a high voltage bipolar PNP transistor designed for efficient switching and amplification tasks in electronic circuits. It is housed in a compact 3-pin SOT-23 surface mount package, facilitating low-profile PCB designs, and is suitable for use in automotive, industrial, and consumer electronics requiring robust performance.

This transistor supports a maximum collector current of -500 mA and a collector-emitter voltage of -500 V, making it suitable for moderate power and high voltage applications. It features a minimum DC current gain (hFE) of 10 and can dissipate up to 500 mW of power safely.

Thermal performance is reliable up to 150°C operating temperature, catering to environments with elevated heat. Its single PNP transistor configuration offers versatility in circuit design demanding PNP polarity.

The compact dimensions of 3.04 mm length, 3 mm width, and 1.4 mm height contribute to optimized space usage on PCB assemblies while maintaining robust electrical characteristics. Maximum collector current of -500 mA for effective current handling.

High collector-emitter voltage rating of -500 V for stress tolerance. SOT-23 package for surface mounting and compact design. Minimum current gain hFE of 10 ensuring stable amplification. Power dissipation rating of 500 mW for operational safety.

Supports operating temperatures up to 150°C for thermal resilience. Single PNP transistor configuration for a variety of electronic designs. Precise physical dimensions for layout and assembly accuracy. This transistor is ideal for use in industrial, automotive, telecommunications, and general electronic applications requiring reliable bipolar transistor performance.

Explore our comprehensive catalog of discrete Bipolar Transistors and related semiconductor components at EnvMart to find suitable electronic parts for your manufacturing and design needs.

STMicroelectronics High Voltage PNP Transistor 3-Pin SOT-23, -500 mA, -500 V STR2550
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Frequently Asked Questions

The maximum collector current for the STR2550 is -500 mA, which allows it to handle moderate power applications effectively.

The STR2550 has a maximum collector-emitter voltage rating of -500 V, supporting high voltage operations.

This model uses a compact 3-pin SOT-23 surface mount package, facilitating space-efficient PCB layouts.

The minimum DC current gain (hFE) for the STR2550 is 10, ensuring reliable amplification performance.

The maximum power dissipation rating for this transistor is 500 mW, ensuring safe operational limits.

The STR2550 can operate at a maximum temperature of 150°C, allowing stable use in elevated temperature environments.

The STR2550 features a single PNP transistor configuration, enhancing versatility in electronic designs.

The dimensions of the STR2550 are 3.04 mm in length, 3 mm in width, and 1.4 mm in height.

The maximum emitter-base voltage (VEBO) for this model is -7 V.

The STR2550 is suitable for use in automotive, industrial, telecommunications, and general electronic applications requiring reliable bipolar transistor performance.

The maximum collector-base voltage (VCBO) rating for this transistor is -500 V.

The STR2550 is designed for surface mounting, which is ideal for compact PCB designs.

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