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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 27.5mm |
| Length | 7.8mm |
| Model | BUX87 |
| Width | 2.9mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-32 |
| Minimum Operating Temperature | 0°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 714-6756Brand: STMicroelectronicsManufacturers Part No.: BUX87 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 450V |
| Minimum DC Current Gain hFE | 12 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 1000V |
| Maximum Power Dissipation Pd | 40W |
| Maximum DC Collector Current Idc | 500mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 20MHz |
STMicroelectronics BUX87 is a robust high voltage NPN bipolar transistor designed primarily for industrial and electronic circuit applications requiring reliable switching and amplification under demanding electrical conditions. It supports a maximum DC collector current of 500 mA and a collector-emitter voltage rating of 450 V, making it suitable for power regulation and control.
This transistor is housed in a 3-pin Through Hole SOT-32 package measuring 27.5 mm in height, 7.8 mm in length, and 2.9 mm in width, facilitating easy PCB mounting and integration. The device has a maximum power dissipation of 40 W, enabling it to handle substantial power loads without degradation in performance.
With a minimum DC current gain (hFE) of 12 and a maximum transition frequency of 20 MHz, the BUX87 transistor offers efficient signal amplification and switching capabilities for automotive, industrial, and general electronic use. The transistor operates reliably across a temperature range of 0°C to 150°C, ensuring durability in diverse environments.
Additional electrical limits include a maximum collector-base voltage of 1000 V and a maximum emitter-base voltage of 5 V, providing enhanced protection against voltage spikes and ensuring operational safety. The NPN transistor polarity and single transistor configuration are optimized for various high voltage power applications.
This component does not display certifications or automotive standards but is widely used in applications involving power supply designs, amplification stages, and relay drivers. Supports a collector-emitter voltage of up to 450 V.
Delivers a maximum power dissipation of 40 W for reliable operation. Has a minimum DC current gain (hFE) of 12 ensuring efficient amplification. Designed for operating temperature range between 0°C and 150°C. Maximum transition frequency of 20 MHz suitable for various electronic applications.
Featuring three pins in a compact SOT-32 Through Hole package. Supports a collector-base voltage of up to 1000 V and emitter-base voltage of 5 V. Ideal for high voltage and power switching circuits in industrial and electronic equipment.
This transistor is a fundamental component for engineers and designers working on power management, motor control, and switching applications in industrial, manufacturing, and electronic sectors. It is recommended for prototyping and serial production where high voltage and power control are required.
Explore the Electronics & Electricals category for more Bipolar Transistors and discrete semiconductor components at EnvMart.
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