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STMicroelectronics High Voltage NPN Bipolar Transistor 500 mA, 450 V, 40 W, Through Hole SOT-32 BUX87

Category Bipolar Transistors Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 27.5mm
Length 7.8mm
Model BUX87
Width 2.9mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type SOT-32
Minimum Operating Temperature 0°C
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RS Stock No. 714-6756Brand: STMicroelectronicsManufacturers Part No.: BUX87
Pin Count 3
Maximum Collector Emitter Voltage Vceo 450V
Minimum DC Current Gain hFE 12
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 1000V
Maximum Power Dissipation Pd 40W
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single
Maximum Transition Frequency ft 20MHz

Key Features

  • Supports a collector-emitter voltage of up to 450 V.
  • Delivers a maximum power dissipation of 40 W for reliable operation.
  • Has a minimum DC current gain (hFE) of 12 ensuring efficient amplification.
  • Designed for operating temperature range between 0°C and 150°C.
  • Maximum transition frequency of 20 MHz suitable for various electronic applications.
  • Featuring three pins in a compact SOT-32 Through Hole package.
  • Supports a collector-base voltage of up to 1000 V and emitter-base voltage of 5 V.
  • Ideal for high voltage and power switching circuits in industrial and electronic equipment.

Product Description

STMicroelectronics BUX87 is a robust high voltage NPN bipolar transistor designed primarily for industrial and electronic circuit applications requiring reliable switching and amplification under demanding electrical conditions. It supports a maximum DC collector current of 500 mA and a collector-emitter voltage rating of 450 V, making it suitable for power regulation and control.

This transistor is housed in a 3-pin Through Hole SOT-32 package measuring 27.5 mm in height, 7.8 mm in length, and 2.9 mm in width, facilitating easy PCB mounting and integration. The device has a maximum power dissipation of 40 W, enabling it to handle substantial power loads without degradation in performance.

With a minimum DC current gain (hFE) of 12 and a maximum transition frequency of 20 MHz, the BUX87 transistor offers efficient signal amplification and switching capabilities for automotive, industrial, and general electronic use. The transistor operates reliably across a temperature range of 0°C to 150°C, ensuring durability in diverse environments.

Additional electrical limits include a maximum collector-base voltage of 1000 V and a maximum emitter-base voltage of 5 V, providing enhanced protection against voltage spikes and ensuring operational safety. The NPN transistor polarity and single transistor configuration are optimized for various high voltage power applications.

This component does not display certifications or automotive standards but is widely used in applications involving power supply designs, amplification stages, and relay drivers. Supports a collector-emitter voltage of up to 450 V.

Delivers a maximum power dissipation of 40 W for reliable operation. Has a minimum DC current gain (hFE) of 12 ensuring efficient amplification. Designed for operating temperature range between 0°C and 150°C. Maximum transition frequency of 20 MHz suitable for various electronic applications.

Featuring three pins in a compact SOT-32 Through Hole package. Supports a collector-base voltage of up to 1000 V and emitter-base voltage of 5 V. Ideal for high voltage and power switching circuits in industrial and electronic equipment.

This transistor is a fundamental component for engineers and designers working on power management, motor control, and switching applications in industrial, manufacturing, and electronic sectors. It is recommended for prototyping and serial production where high voltage and power control are required.

Explore the Electronics & Electricals category for more Bipolar Transistors and discrete semiconductor components at EnvMart.

STMicroelectronics High Voltage NPN Bipolar Transistor 500 mA, 450 V, 40 W, Through Hole SOT-32 BUX87
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Frequently Asked Questions

The maximum collector-emitter voltage for this model is 450 V.

This transistor has a maximum power dissipation of 40 W, allowing it to handle substantial power loads.

The minimum DC current gain (hFE) for this transistor is 12, ensuring efficient amplification.

It operates reliably within a temperature range of 0°C to 150°C.

The maximum transition frequency for this model is 20 MHz, suitable for various electronic applications.

This transistor is housed in a compact SOT-32 Through Hole package.

The dimensions of this model are 27.5 mm in height, 7.8 mm in length, and 2.9 mm in width.

The maximum collector-base voltage supported by the BUX87 is 1000 V.

The maximum emitter-base voltage for this transistor is 5 V.

This model uses a single transistor configuration, specifically an NPN polarity.

The maximum DC collector current rating for this transistor is 500 mA.

It is commonly used in power supply designs, amplification stages, and relay drivers in industrial and electronic applications.

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