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ROHM Silicon Junction Switching Diode Single 3-Pin SOD-123 80 V 300 mA DAN217T146

Category Switching Diodes Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 1.1mm
Length 2.9mm
Model DAN217T146
Width 1.6mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOD-123
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
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RS Stock No. 700-2769Brand: ROHMManufacturers Part No.: DAN217T146
Pin Count 3
Maximum Power Dissipation Pd 200mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 4A
Maximum Forward Voltage Vf 1.2V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 300mA
Maximum Peak Reverse Repetitive Voltage Vrrm 80V

Key Features

  • The diode is configured as a single silicon junction device suitable for surface mounting.
  • It offers a peak non-repetitive forward surge current of 4 A for brief overload conditions.
  • Maximum power dissipation rating is 200 mW allowing efficient heat management.
  • It operates safely within a temperature range of -55°C to 150°C for versatile industrial use.
  • The diode features a peak reverse recovery time of 4 ns supporting fast switching applications.
  • The maximum forward voltage drop is 1.2 V ensuring low conduction losses.
  • No automotive standard compliance is specified for this component.
  • The component does not carry any specific standards or approvals.

Product Description

ROHM DAN217T146 is a high-performance silicon junction switching diode encapsulated in a compact 3-pin SOD-123 surface mount package. It is engineered to deliver reliable switching capability with a maximum forward current rating of 300 mA and peak repetitive reverse voltage of 80 V, making it suitable for various electronic circuit protection and switching tasks.

Its construction as a single diode device ensures straightforward integration in discrete semiconductor applications. The device supports a peak non-repetitive forward surge current of 4 A, which provides tolerance against transient overloads. With a power dissipation capacity of 200 mW and a fast peak reverse recovery time of 4 ns, this diode performs efficiently in switching circuits demanding minimal delay and heat generation.

The specified operating temperature range from -55°C to 150°C allows the diode to function effectively in harsh industrial and commercial environments. Its dimensions of 2.9 mm by 1.6 mm by 1.1 mm enable compact layout options for designs requiring small footprint components.

DAN217T146 is ideal for industrial electronics, power management systems, instrumentation, and telecommunications where switching diodes are essential. The product does not bear automotive certifications or special standards, focusing on general electronic component applications.

The diode is single silicon junction and surface mountable for ease of PCB assembly. Maximum forward current is 300 mA ensuring moderate load handling. Peak surge current capacity of 4 A enhances transient tolerance. Maximum forward voltage of 1.2 V ensures low voltage loss in circuitry.

Peak reverse recovery time of 4 ns enables rapid switching speeds. Power dissipation rating of 200 mW supports efficient thermal management. Compact SOD-123 package dimensions support high-density PCB designs. Wide temperature operating range from -55°C to 150°C suitable for industrial use.

No specific standards or automotive approvals. Explore additional ROHM semiconductor components and Switching Diodes at EnvMart for your industrial and electronic design requirements.

ROHM Silicon Junction Switching Diode Single 3-Pin SOD-123 80 V 300 mA DAN217T146
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Frequently Asked Questions

The maximum forward current rating of this model is 300 mA.

It features a peak reverse recovery time of 4 ns, supporting fast switching applications.

The maximum power dissipation rating is 200 mW, allowing for efficient heat management.

The dimensions of the SOD-123 package are 2.9 mm in length, 1.6 mm in width, and 1.1 mm in height.

It supports a peak non-repetitive forward surge current of 4 A for brief overload conditions.

This diode operates safely within a temperature range of -55°C to 150°C.

The maximum peak reverse repetitive voltage is 80 V.

It is configured as a single silicon junction diode, suitable for surface mounting.

The maximum forward voltage drop is 1.2 V, ensuring low conduction losses.

No automotive standard compliance is specified for this component.

It is suitable for various electronic circuit protection and switching tasks, including industrial electronics and power management systems.

This model has a pin count of 3.

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