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Nexperia Small Signal PNP Transistor 100 mA, 45 V, Surface Mount SOT-323 Package BC857W

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Nexperia Small Signal PNP Transistor 100 mA, 45 V, Surface Mount SOT-323 Package BC857W

Name: Nexperia Small Signal PNP Transistor 100 mA, 45 V, Surface Mount SOT-323 Package BC857W
Brand: Nexperia
SKU: 376665
Price: 0.04 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	Malaysia
Brand	Nexperia
Height	1.1mm
Length	2.2mm
Model	BC857W
Width	2.2mm
Mount Type	Surface
Series	BC857W
Maximum Operating Temperature	150°C
Package Type	SOT-323
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-45V
Minimum DC Current Gain hFE	125
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-5V
Maximum Collector Base Voltage VCBO	-50V
Maximum Power Dissipation Pd	200mW
Maximum DC Collector Current Idc	-100mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz
onsemi SBC807-40WT1G Transistor, 500 mA PNP, 45 V, 3-Pin SOT-323Brand	onsemi

Key Features

Maximum DC Collector Current of 100 mA ensures suitability for low current circuits.
Collector-Emitter Voltage rating of 45 V enables operation in medium voltage applications.
Compact 3-Pin SOT-323 package facilitates surface mounting and board space saving.
High DC current gain minimum of 125 provides effective amplification.
Wide operating temperature range from -65°C to 150°C supports harsh environments.
Maximum power dissipation of 200 mW ensures reliable thermal performance.
High transition frequency of 100 MHz benefits high-frequency switching tasks.
Single transistor configuration with PNP polarity for versatile electronic designs.

Product Description

Nexperia BC857W is a small signal PNP bipolar junction transistor designed specifically for amplification and switching applications in electronic circuits. It provides a collector current of up to 100 mA and a collector-emitter voltage maximum rating of 45 V, making it suited for a range of low power electronic devices.

This transistor uses a 3-pin SOT-323 surface mount package, optimizing PCB space, and enabling automated assembly processes. It features a minimum DC current gain (hFE) of 125, ensuring effective amplification in signal processing applications.

The transistor operates reliably over a wide temperature range from -65°C to 150°C, allowing usage in demanding industrial and commercial environments. With a maximum power dissipation of 200 mW and a maximum transition frequency of 100 MHz, it supports high-frequency and low power switching circuits.

Applications include industrial monitoring systems, automotive electronics, consumer devices, and general-purpose amplification circuits. Its small footprint and dependable electrical characteristics make it ideal for laboratory, manufacturing, and commercial electronic assembly.

Maximum DC Collector Current of 100 mA ensures suitability for low current circuits. Collector-Emitter Voltage rating of 45 V enables operation in medium voltage applications. Compact 3-Pin SOT-323 package facilitates surface mounting and board space saving.

High DC current gain minimum of 125 provides effective amplification. Wide operating temperature range from -65°C to 150°C supports harsh environments. Maximum power dissipation of 200 mW ensures reliable thermal performance.

High transition frequency of 100 MHz benefits high-frequency switching tasks. Single transistor configuration with PNP polarity for versatile electronic designs. Manufactured in Malaysia maintaining quality and reliability standards.

For professional electronic component needs, explore more in the Bipolar Transistors category on EnvMart to find compatible products and accessories.

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Frequently Asked Questions

The maximum DC collector current for this transistor is 100 mA, making it suitable for low current circuits.

The collector-emitter voltage rating of the BC857W is 45 V, enabling operation in medium voltage applications.

This model comes in a compact 3-pin SOT-323 surface mount package, which facilitates space-saving on PCBs.

The minimum DC current gain (hFE) of this transistor is 125, ensuring effective amplification for signal processing applications.

The BC857W operates reliably over a wide temperature range from -65°C to 150°C, suitable for harsh environments.

The maximum power dissipation for this transistor is 200 mW, ensuring reliable thermal performance during operation.

This model has a maximum transition frequency of 100 MHz, which benefits high-frequency switching tasks.

The BC857W is a single transistor configuration with PNP polarity, making it versatile for various electronic designs.

The dimensions of this transistor are 2.2 mm in length and width, with a height of 1.1 mm.

The maximum emitter-base voltage (VEBO) for this transistor is -5 V.

The BC857W is manufactured in Malaysia, maintaining quality and reliability standards.

This transistor is suitable for applications including industrial monitoring systems, automotive electronics, consumer devices, and general-purpose amplification circuits.