Taiwan Semiconductor Bi-Directional Single Element TVS Diode 400 W, 2-Pin DO-214 SMAJ30CA R3

Taiwan Semiconductor SMAJ30CA R3 is a high-performance, bi-directional single element TVS diode designed to protect sensitive electronics from transient voltage spikes. With a robust pulse power dissipation rating of 400 W and a 2-pin DO-214 surface mount package, it is suitable for compact PCB implementations requiring reliable voltage suppression.

This diode provides a minimum breakdown voltage of 33.3V and can handle maximum reverse voltages up to 30V. Its clamping voltage of 48.4V ensures that voltage spikes are effectively limited, preventing damage to downstream circuit components. The device supports peak pulse currents up to 8.3A, making it capable of enduring high surge current events.

Operating over a wide temperature range from -55°C to 150°C, this TVS diode offers reliable performance in harsh environments commonly found in industrial, aerospace, automotive, and consumer electronic applications. With an ultra-low maximum reverse leakage current of 5μA, it maintains circuit efficiency by minimizing power waste during normal operation.

The compact dimensions - 4.6 mm length, 2.83 mm width, and 2.3 mm height - facilitate easy integration into densely packed electronic assemblies. The surface mount DO-214 package type enhances automated assembly line processes, improving production efficiency.

Its ESD protection capability further enhances device resilience against electrostatic discharge events, which is critical in many lab, manufacturing, and field environments. The SMAJ series from Taiwan Semiconductor is trusted for stable and consistent protective performance across multiple use cases.

This diode features a single-element bi-directional configuration for effective voltage clamp. It has a minimum breakdown voltage of 33.3 volts ensuring protection at that threshold. The package type is DO-214 surface mount with a compact 2-pin design.

Maximum reverse standoff voltage is rated at 30 volts with a clamping voltage of 48.4 volts. Operating temperature ranges from -55 to 150 degrees Celsius for robust thermal endurance. Peak pulse current capacity is 8.3 amperes providing strong surge current handling.

Maximum reverse leakage current is minimal at 5 microamperes ensuring low power loss. ESD protection is included, enhancing device longevity in electrostatic discharge sensitive environments. The diode dimensions are small with length 4.6 mm, width 2.83 mm, and height 2.3 mm suitable for dense PCB layouts.

This diode is designed for electronic circuit protection in industrial and commercial semiconductor applications.

Explore the range of Taiwan Semiconductor TVS Diodes and other semiconductor protective devices at EnvMart for your industrial, laboratory, manufacturing, and commercial electronics needs.