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STMicroelectronics Darlington Transistor NPN 8A 100V 3-Pin DPAK MJD122T4

Category Darlington Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.4mm
Length 6.6mm
Model MJD122T4
Mount Type Surface
Series MJD122
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 8A
Maximum Collector Emitter Voltage Vceo 100V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 2V
Maximum Collector Base Voltage VCBO 100V
Maximum Collector Cut-off Current 0.01mA
Maximum Power Dissipation Pd 20W
onsemi NJVMJD122T4G 1 Darlington Transistor NPN, 8 A 100 V HFE 100, 3-Pin DPAKBrand: onsemi
STMicroelectronics MJD122T4 1 Darlington Transistor NPN, 8 A 100 V HFE 100, 3-Pin DPAK

Key Features

  • High current capability up to 8 amperes.
  • Maximum collector-emitter voltage rating of 100 volts.
  • Three-pin surface mount package in TO-252 form factor.
  • Minimum DC current gain (hFE) of 100 ensuring efficient amplification.
  • Maximum power dissipation of 20 watts for reliable operation.
  • Operating temperature range from -65°C to 150°C.
  • NPN transistor polarity for diverse electronic applications.
  • Compact dimensions with 6.6mm length and 2.4mm height.

Product Description

STMicroelectronics MJD122T4 is a high-performance NPN Darlington Transistor designed for robust power switching and amplification applications. Featuring a maximum continuous collector current of 8 amperes and a collector-emitter voltage rating of 100 volts, it delivers reliable and efficient performance in compact SMT packaging.

The MJD122T4 is housed in a 3-pin DPAK (TO-252) surface mount package, enabling easy integration into modern PCB designs. It supports a minimum DC current gain (hFE) of 100 and maximum power dissipation of 20 watts, making it suitable for medium power electronic circuits requiring high gain and fast switching.

This transistor operates effectively within a broad temperature range from -65°C to 150°C, making it reliable for industrial, automotive, and electronic manufacturing environments. Its compact dimensions (6.6 mm length and 2.4 mm height) allow space-saving in dense circuit layouts.

Additional technical features include a maximum emitter-base voltage of 5 volts and a collector-emitter saturation voltage up to 2 volts, which contribute to its performance in switching and amplification tasks.

Typical applications include industrial control systems, power switching devices in electronics and automation, and use in HVAC, laboratory instruments, and manufacturing equipment. The transistor's NPN polarity makes it versatile across different circuit designs.

High current handling of 8A for demanding power applications. 100V voltage handling capability supports robust circuit protection. Low saturation voltage minimises power loss. Wide operating temperature range ensures reliable use in harsh environments.

Compact surface mount package optimizes PCB space and assembly. Strong current gain provides effective signal amplification. Designed for surface mount technology (SMT) for modern electronic manufacturing. Industrial, automotive, and general electronic applications suitability.

Compliant with STMicroelectronics quality standards for durability and performance. Easy integration with standard DPAK footprint supporting mass production.

This product contains a single MJD122T4 transistor in the package. For more industrial electronic components like this, browse STMicroelectronics and other leading brands at EnvMart.

STMicroelectronics Darlington Transistor NPN 8A 100V 3-Pin DPAK MJD122T4
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Frequently Asked Questions

The maximum continuous collector current for this model is 8 amperes.

It has a collector-emitter voltage rating of 100 volts.

The minimum DC current gain (hFE) is 100, ensuring efficient amplification.

This model can handle a maximum power dissipation of 20 watts.

It operates effectively within a temperature range from -65°C to 150°C.

This transistor is housed in a 3-pin DPAK (TO-252) surface mount package.

The dimensions are 6.6 mm in length and 2.4 mm in height.

The maximum emitter-base voltage (VEBO) is 5 volts.

This model has an NPN transistor polarity, making it versatile for various applications.

Typical applications include industrial control systems, power switching devices, and use in HVAC and laboratory instruments.

The maximum collector-emitter saturation voltage (VceSAT) is up to 2 volts.

There is 1 element per chip in this model.

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