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Nexperia Low Saturation Voltage PNP Bipolar Transistor 2 A, 50 V, SOT-23 PBSS5350T,215

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Nexperia Low Saturation Voltage PNP Bipolar Transistor 2 A, 50 V, SOT-23 PBSS5350T,215

Name: Nexperia Low Saturation Voltage PNP Bipolar Transistor 2 A, 50 V, SOT-23 PBSS5350T,215
Brand: Nexperia
SKU: 338355
Price: 0.22 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1.1mm
Length	3mm
Model	PBSS5350T,215
Width	2.5mm
Mount Type	Surface
Series	PBSS5350T
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-50V
Minimum DC Current Gain hFE	80
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	50V
Maximum Power Dissipation Pd	1.2W
Maximum DC Collector Current Idc	-2A
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

This transistor features a maximum DC collector current of 2 A.
It supports a maximum collector emitter voltage of 50 V.
The package type is compact SOT-23 suitable for surface mounting.
Maximum power dissipation rating is 1.2 W providing efficiency in operation.
Operates over a temperature range from -65°C to 150°C.
It delivers a minimum DC current gain (hFE) of 80 for reliable performance.
The maximum transition frequency (ft) is 100 MHz, suitable for high-frequency circuits.
Has 3 pins and single transistor configuration with PNP polarity.

Product Description

Nexperia PBSS5350T,215 is a low saturation voltage PNP bipolar transistor optimized for efficient switching and digital electronic applications. It supports a maximum collector current of 2 A and a collector-emitter voltage rating of 50 V, housed in a reliable and space-saving SOT-23 package designed for surface mounting.

This transistor exhibits a power dissipation of up to 1.2 W, enabling operation with reduced heat generation and higher efficiency. It is rated to function in temperature environments ranging from -65°C up to 150°C, ensuring robustness in various industrial and commercial electronic systems.

With a minimum DC current gain (hFE) of 80 and a maximum transition frequency of 100 MHz, it provides reliable gain and performance for high-frequency circuits such as amplifiers and switching regulators. Its 3-pin, PNP configuration allows compatibility with common circuit designs requiring bipolar transistors.

The compact physical dimensions (3 mm length, 2.5 mm width, and 1.1 mm height) facilitate its use in space-critical PCB layouts typical in consumer electronics, industrial automation, and laboratory equipment.

Maximum DC collector current: 2 A. Maximum collector emitter voltage: 50 V. SOT-23 package for surface mounting. Maximum power dissipation: 1.2 W. Operating temperature: -65°C to 150°C. Minimum DC current gain (hFE): 80.

Maximum transition frequency (ft): 100 MHz. 3 pins with PNP transistor polarity. Compact dimensions support space-saving designs. Origin: China.

This transistor is ideal for applications in industrial electronic components, telecommunications devices, power management systems, and consumer electronic circuits. Nexperia products combine innovation and reliability for seamless integration into diverse electronic assemblies.

Explore a range of Bipolar Transistors and other discrete semiconductors in the Electronics & Electricals category at EnvMart for all your technical and industrial needs.