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| Country of Origin | Malaysia |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 3mm |
| Model | PBSS4140DPN,115 |
| Width | 1.5mm |
| Mount Type | Surface |
| Series | PBSS4140DPN |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOP |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | 40V |
| Minimum DC Current Gain hFE | 160 |
| Transistor Polarity | NPN + PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 40V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 370mW |
| Maximum DC Collector Current Idc | 1A |
| Transistor Configuration | Isolated |
| Maximum Transition Frequency ft | 150MHz |
Nexperia PBSS4140DPN,115 is a low saturation voltage dual NPN and PNP transistor designed for high efficiency and compactness. It features a maximum DC collector current of 1 A and a maximum collector-emitter voltage of 40 V, housed in a surface mount 6-pin TSOP package measuring 3 mm by 1.5 mm by 1.1 mm.
This transistor offers low collector-emitter saturation voltage leading to reduced power losses and heat generation, thereby increasing overall circuit efficiency. It supports a maximum power dissipation of 370 mW and maintains performance over a wide operating temperature range from -65°C to 150°C, making it suitable for demanding environments including automotive and industrial applications.
The PBSS4140DPN,115 transistor provides a minimum DC current gain (hFE) of 160 and a maximum transition frequency of 150 MHz, making it ideal for fast switching and digital signal processing circuits. The device is isolated in its transistor configuration and complies with RoHS standards and the automotive AEC-Q101 standard, ensuring high quality and safety.
Typical applications include automotive electronics, industrial control systems, switching power supplies, and general-purpose amplification. Its compact TSOP package allows easy surface mounting, saving PCB space in dense assemblies.
This transistor features low saturation voltage for efficient switching and digital applications. It supports a maximum power dissipation of 370 mW, suitable for compact electronic designs. The device operates across a wide temperature range from -65°C to 150°C, ensuring robustness in harsh environments.
Surface mount package TSOP with dimensions 3 mm length, 1.5 mm width, and 1.1 mm height provides space-saving integration. Minimum DC current gain of 160 enables effective amplification in bipolar transistor circuits. Automatic AEC-Q101 automotive standard compliance ensures reliability in automotive electronics.
Operating frequency up to 150 MHz supports high-speed signal applications. Explore more components like the PBSS4140DPN,115 dual transistor in EnvMart’s Electronics & Electricals category for semiconductor and bipolar transistor needs.
Explore more products in our Bipolar Transistors category.
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