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Nexperia 1 A NPN Bipolar Transistor 80 V, 960 mW Power Dissipation, 4-Pin SOT-223 Package BCP56-16,115

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Nexperia 1 A NPN Bipolar Transistor 80 V, 960 mW Power Dissipation, 4-Pin SOT-223 Package BCP56-16,115

Name: Nexperia 1 A NPN Bipolar Transistor 80 V, 960 mW Power Dissipation, 4-Pin SOT-223 Package BCP56-16,115
Brand: Nexperia
SKU: 334686
Price: 0.16 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1.8mm
Length	6.7mm
Model	BCP56-16,115
Width	3.7mm
Mount Type	Surface
Series	BCP56
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	4
Maximum Collector Emitter Voltage Vceo	80V
Minimum DC Current Gain hFE	63
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	100V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	960mW
Maximum DC Collector Current Idc	1A
Transistor Configuration	Single
Maximum Transition Frequency ft	180MHz

Key Features

The transistor is housed in a compact 4-pin SOT-223 surface-mount package.
It offers a maximum power dissipation of 960 milliwatts ensuring reliable operation.
Capable of continuous operation from -55°C up to 150°C ambient temperature.
Featuring a transition frequency of 180 MHz suitable for high-frequency applications.
Designed in compliance with RoHS standards and the automotive standard AEC-Q101.
Its minimum DC current gain (hFE) is 63, providing amplification efficiency.
The package dimensions measure approximately 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.
Ideal for general purpose amplification and switching in electronic circuits.

Product Description

Nexperia BCP56-16,115 is a general-purpose NPN bipolar transistor designed for a broad range of electronic applications requiring a maximum collector current of 1 A and a collector-emitter voltage up to 80 V. It is packaged in a compact 4-pin SOT-223 surface mount form factor, optimizing PCB space while providing efficient thermal management.

The transistor supports a maximum power dissipation of 960 mW, allowing it to handle moderate power levels during operation. It ensures reliable performance over a wide operating temperature range from -55°C to 150°C, which makes it suitable for use in harsh environments including automotive electronics compliant with the AEC-Q101 standard.

The device has a minimum DC current gain (hFE) of 63 and a maximum transition frequency of 180 MHz, enabling efficient signal amplification and switching in RF, low noise, and switching circuits. The maximum collector-base voltage rating is 100 V and the emitter-base voltage maximum is 5 V. This ensures robust operation in circuits requiring high voltage tolerance.

The physical dimensions of the transistor are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height, making it compact for space-constrained PCB designs. It fully complies with RoHS environmental standards, ensuring it is free from harmful substances.

This component is engineered by Nexperia and manufactured in China, delivering trusted industrial quality. Typical applications include general purpose switching, amplification in electronic circuits for consumer, industrial, and automotive sectors.

The transistor offers high reliability in surface mount technology applications. Compliant with industry RoHS and automotive AEC-Q101 standards. Compact SOT-223 package supports efficient heat dissipation. Suitable for both low noise and switching amplifier designs.

Wide operating temperature range for industrial and automotive use. Supports high transition frequency enabling RF applications. Explore more high-quality Bipolar Transistors and semiconductor components suitable for professional electronics design and manufacturing at EnvMart.