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STMicroelectronics PNP Bipolar Transistor, Maximum DC Collector Current -500 mA, Maximum Collector Emitter Voltage MJE350
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 27.5mm |
| Length | 7.8mm |
| Model | MJE350 |
| Width | 2.9mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-32 |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -300V |
| Minimum DC Current Gain hFE | 30 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 3V |
| Maximum Collector Base Voltage VCBO | 300V |
| Maximum Power Dissipation Pd | 20.8W |
| Maximum DC Collector Current Idc | -500mA |
| Transistor Configuration | Single |
| onsemi MJE350G Bipolar Transistor, -500 mA PNP, -300 V, 3-Pin TO-225Brand | onsemi |
Key Features
- This transistor supports through-hole mounting for ease of PCB assembly.
- It has a maximum power dissipation rating of 20.8 W, suitable for moderate power applications.
- The transistor offers a minimum DC current gain (hFE) of 30, ensuring reliable amplification performance.
- Rated for operating temperatures from 0°C to 150°C, allowing use in various industrial environments.
- The compact physical dimensions provide a height of 27.5 mm, length of 7.8 mm, and width of 2.9 mm.
- This device features a single transistor configuration and is designed for high-voltage applications.
- The maximum emitter base voltage is 3 V, and collector base voltage is 300 V.
Product Description
STMicroelectronics MJE350 is a PNP bipolar transistor designed for power applications requiring up to -500 mA collector current and -300 V collector-emitter voltage. Packaged in a 3-pin SOT-32 robust through-hole mount, it offers reliable performance in both industrial and electronic circuits.
Ideal for high voltage and power dissipation scenarios, it supports a maximum power dissipation of 20.8 W. The transistor has a minimum DC current gain (hFE) of 30, ensuring stable signal amplification.
Its operating temperature range from 0°C to 150°C allows use in demanding environments including manufacturing and testing equipment. The compact size (27.5 mm height, 7.8 mm length, 2.9 mm width) enables integration into dense assemblies.
Supports through-hole mounting for ease of assembly. Single transistor configuration suitable for varied applications. High voltage tolerance up to 300 V collector-base voltage. Robust design ensures durability and long life in industrial use.
Environmentally compliant with no automotive standard certification.
This transistor is commonly used in power amplification, switching, and high-voltage circuits in industrial, electronics, and laboratory settings. Its quality and specifications make it suitable for OEMs and electronic design projects.
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Frequently Asked Questions
The maximum collector-emitter voltage (Vceo) of the MJE350 transistor is -300 V.
The maximum DC collector current (Idc) for the MJE350 is -500 mA.
This transistor has a maximum power dissipation rating of 20.8 W, making it suitable for moderate power applications.
The MJE350 offers a minimum DC current gain (hFE) of 30, ensuring reliable amplification performance.
The operating temperature range for this model is from 0°C to 150°C, allowing use in various industrial environments.
The dimensions of the MJE350 are 27.5 mm in height, 7.8 mm in length, and 2.9 mm in width.
This model supports through-hole mounting, which facilitates ease of PCB assembly.
The MJE350 features a single transistor configuration, suitable for a variety of applications.
The maximum emitter-base voltage (VEBO) for the MJE350 is 3 V.
The MJE350 is packaged in a SOT-32 type, which is a robust through-hole mount.
This transistor is commonly used in power amplification, switching, and high-voltage circuits in industrial, electronics, and laboratory settings.
The MJE350 is manufactured in India.
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