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STMicroelectronics NPN Darlington Transistor 8 A 80 V 60W TO-220 3-Pin BDX53B
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | BDX53B |
| Mount Type | Through Hole |
| Series | BDX53B |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 8A |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 750 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 80V |
| Maximum Collector Cut-off Current | 0.2mA |
| Maximum Power Dissipation Pd | 60W |
| STMicroelectronics 1 Darlington Transistor NPN, 8 A 80 V HFE | 750, 3-Pin TO-220 |
Key Features
- Maximum continuous collector current of 8 A supports high current applications.
- Rated for maximum collector-emitter voltage of 80 V ensuring robust operation.
- High minimum DC current gain (hFE) of 750 for efficient amplification.
- Durable TO-220 through-hole package with 3 pins for easy mounting.
- Maximum power dissipation rating of 60 W to handle significant thermal loads.
- Wide operating temperature range from -65°C to 150°C.
- Low saturation voltage of 2 V enhances switching performance.
- NPN transistor polarity suitable for various electronic circuits.
Product Description
STMicroelectronics BDX53B is a high-performance NPN Darlington transistor designed for applications requiring high current and voltage handling capabilities. This device features a maximum continuous collector current (Ic) of 8 A and a maximum collector-emitter voltage (Vceo) of 80 V, making it suited for power switching and amplification.
Housed in a robust TO-220 package with through-hole mount and 3 pins, the BDX53B delivers reliable mechanical and electrical performance. It boasts a high minimum DC current gain (hFE) of 750, ensuring efficient transistor operation in amplification circuits.
The transistor provides a maximum power dissipation of 60 W and operates effectively across a wide temperature range from -65°C up to 150°C, supporting rugged industrial and commercial applications. It has a low collector-emitter saturation voltage of approximately 2 V, which reduces power losses during switching.
With a maximum emitter-base voltage (VEBO) of 5 V and a maximum collector-base voltage (VCBO) of 80 V, this NPN Darlington Transistor offers excellent electrical characteristics for a variety of electronic component needs including power amplification, motor drives, and other load-driving circuits.
Maximum continuous collector current: 8 A. Collector-emitter voltage rating: 80 V. Package type: TO-220, through-hole mounted with 3 pins. High current gain (hFE): minimum 750. Power dissipation up to 60 W. Operating temperature range from -65°C to 150°C.
Low saturation voltage of 2 V improves efficiency. Compact device size with height of 9.15 mm and length of 10.4 mm. Suitable for automotive and industrial electronics. Application domains include power amplifiers, switching circuits, and motor controls.
This transistor is part of STMicroelectronics' extensive range of bipolar transistors and Darlington pairs designed for reliable performance in demanding electronic applications. Explore EnvMart's selection of power transistors and related components to find the ideal devices for your projects.
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Frequently Asked Questions
The maximum continuous collector current for this model is 8 A.
The maximum collector-emitter voltage rating for the BDX53B is 80 V.
The maximum power dissipation rating of the BDX53B is 60 W.
The minimum DC current gain (hFE) for the BDX53B is 750.
This model operates effectively within a temperature range from -65°C to 150°C.
The BDX53B is housed in a TO-220 package with a through-hole mount and 3 pins.
The maximum collector-emitter saturation voltage (VceSAT) is approximately 2 V.
The height of the BDX53B is 9.15 mm and the length is 10.4 mm.
The BDX53B is an NPN transistor.
This model is suitable for applications such as power amplification, motor drives, and switching circuits.
The maximum emitter-base voltage (VEBO) for the BDX53B is 5 V.
The BDX53B contains 1 element per chip.
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