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Nexperia PNP Bipolar Transistor 100 mA, 65 V, Surface Mount SOT-23 Package BC856B,215

Category Bipolar Transistor Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model BC856B,215
Width 1.4mm
Mount Type Surface
Series BC856
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 65V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor is housed in a compact SOT-23 package suitable for high-density PCB layouts.
  • The device supports a maximum power dissipation of 250 mW, ideal for low power amplification.
  • It provides a minimum DC current gain (hFE) of 220 for efficient signal amplification.
  • Rated for a maximum transition frequency of 100 MHz, making it suitable for high-frequency applications.
  • The transistor operates reliably within a temperature range of -65°C to 150°C, suitable for diverse environments.
  • Compliant with RoHS standards ensuring environmental safety and reduced hazardous substances.
  • Incorporates automotive standard AEC-Q101 certification for enhanced reliability in automotive electronics.
  • Designed with a single transistor configuration and PNP polarity for specific circuit requirements.

Product Description

Nexperia BC856B,215 is a PNP bipolar transistor packaged in a compact SOT-23 surface mount case. It supports a maximum DC collector current of 100 mA and can withstand collector-emitter voltages up to 65 V. Designed primarily for semiconductor discrete applications, it is ideal for signal amplification tasks in industrial, automotive, and consumer electronic circuits requiring low power and small size components.

The transistor features a minimum DC current gain of 220 and a maximum power dissipation of 250 mW, facilitating effective signal control. It operates efficiently at frequencies up to 100 MHz, suitable for RF and fast switching applications.

Engineered to endure wide temperature environments ranging from -65°C to 150°C, this transistor is compliant with RoHS environmental standards and meets AEC-Q101 automotive qualification, confirming its suitability for automotive and harsh condition applications.

Its 3-pin SOT-23 package dimensions approximate 3 mm length, 1.4 mm width, and 1.1 mm height, supporting compact PCB designs requiring surface mount components. The device provides a single transistor configuration with PNP polarity, supporting circuits requiring this specific transistor type.

This component finds extensive use in industrial automation, instrumentation, telecommunications, and automotive electronics. It ensures reliable performance for designers and engineers needing robust small-signal PNP transistors conforming to modern semiconductor standards.

This transistor is housed in a compact SOT-23 package suitable for high-density PCB layouts. The device supports a maximum power dissipation of 250 mW, ideal for low power amplification. It provides a minimum DC current gain (hFE) of 220 for efficient signal amplification.

Rated for a maximum transition frequency of 100 MHz, making it suitable for high-frequency applications. The transistor operates reliably within a temperature range of -65°C to 150°C, suitable for diverse environments. Compliant with RoHS standards ensuring environmental safety and reduced hazardous substances.

Incorporates automotive standard AEC-Q101 certification for enhanced reliability in automotive electronics. Designed with a single transistor configuration and PNP polarity for specific circuit requirements. Explore more Bipolar Transistors and semiconductor components in the Electronics & Electricals category at EnvMart for professional and industrial applications.

Nexperia PNP Bipolar Transistor 100 mA, 65 V, Surface Mount SOT-23 Package BC856B,215
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

It can withstand a maximum collector-emitter voltage of 65 V.

This transistor supports a maximum power dissipation of 250 mW.

The minimum DC current gain (hFE) is 220, which facilitates efficient signal amplification.

The maximum transition frequency for this model is rated at 100 MHz, making it suitable for high-frequency applications.

It operates reliably within a temperature range of -65°C to 150°C.

The dimensions of the SOT-23 package are approximately 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

Yes, it is compliant with RoHS standards, ensuring reduced hazardous substances.

This model incorporates AEC-Q101 certification, confirming its reliability for automotive applications.

It features a single transistor configuration with PNP polarity, designed for specific circuit requirements.

The maximum emitter-base voltage (VEBO) for this transistor is 5 V.

This transistor is suitable for applications in industrial automation, instrumentation, telecommunications, and automotive electronics.

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