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Infineon CoolMOS N-Channel MOSFET 14 A, 900 V Enhancement 3-Pin TO-220 IPA95R450P7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA95R450P7XKSA1 |
| Mount Type | Surface |
| Series | CoolMOS |
| Maximum Operating Temperature | +150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 450mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 900mV |
Key Features
- 900 V drain-source voltage enables high-voltage switching applications.
- 14 A maximum continuous drain current supports substantial load currents.
- 450 mΩ maximum drain-source resistance reduces conduction losses.
- 30 W power dissipation allows sustained operation under load.
- Forward voltage of 0.9 V minimizes voltage drop during conduction.
- 30 V maximum gate-source voltage permits typical gate drive voltages.
- Operates reliably across -55°C to +150°C ambient temperature range.
- 3-pin TO-220 package supports surface mounting in power electronics.
Product Description
Infineon IPA95R450P7XKSA1 CoolMOS N-Channel MOSFET is designed for robust power conversion and control in demanding industrial and electronic systems. This enhancement-mode transistor features a 900 V maximum drain-source voltage and supports continuous drain currents up to 14 A, making it suitable for high-voltage switching and power management applications.
The device is housed in a 3-pin TO-220 package, facilitating surface mounting and reliable thermal dissipation. Its low maximum drain-source resistance of 450 mΩ significantly reduces conduction losses, while its 0.9 V forward voltage minimizes voltage drops when the body diode conducts. The MOSFET tolerates ambient temperatures ranging from -55°C to +150°C, ensuring stable operation under diverse environmental conditions.
Typical applications include industrial high-voltage power supplies, switch-mode power conversion circuits, motor drive front-end switching, and high-voltage clamp circuits requiring efficient thermal management. Its 30 V gate-source voltage rating safely accommodates standard gate drive voltages in switching circuits.
This device is part of Infineon’s CoolMOS series, known for enhancing switching performance and energy efficiency in power electronics. 900 V drain-source voltage enables high-voltage switching applications. 14 A maximum continuous drain current supports substantial load currents.
450 mΩ maximum drain-source resistance reduces conduction losses. 30 W power dissipation allows sustained operation under load. Forward voltage of 0.9 V minimizes voltage drop during conduction. 30 V maximum gate-source voltage permits typical gate drive voltages.
Operates reliably across -55°C to +150°C ambient temperature range. 3-pin TO-220 package supports surface mounting in power electronics. CoolMOS technology enhances switching efficiency and thermal performance. Explore more power Semiconductors and MOSFET products in the Electronics & Electricals category at EnvMart for your industrial, laboratory, and manufacturing needs.
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Frequently Asked Questions
The maximum drain-source voltage of the Infineon IPA95R450P7XKSA1 is 900 V, making it suitable for high-voltage switching applications.
This model supports a maximum continuous drain current of 14 A, allowing it to handle substantial load currents.
The maximum power dissipation for this MOSFET is 30 W, enabling sustained operation under load conditions.
The maximum gate-source voltage for this device is 30 V, which accommodates typical gate drive voltages in switching circuits.
The IPA95R450P7XKSA1 is housed in a 3-pin TO-220 package, which supports surface mounting in power electronics.
The maximum drain-source resistance is 450 mΩ, which helps to reduce conduction losses during operation.
This model operates reliably across an ambient temperature range of -55°C to +150°C, ensuring stable performance in various conditions.
The forward voltage drop of the IPA95R450P7XKSA1 is 0.9 V, which minimizes voltage drop during conduction.
This device features an N-channel configuration, which is typical for enhancement-mode MOSFETs.
The IPA95R450P7XKSA1 is part of Infineon's CoolMOS series, known for enhancing switching performance and energy efficiency.
Typical applications include industrial high-voltage power supplies, switch-mode power conversion circuits, and motor drive front-end switching.
The IPA95R450P7XKSA1 has a pin count of 3, which is standard for its TO-220 package type.
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