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Nexperia 50 mA NPN Bipolar Transistor 300 V, 3-Pin SOT-23 BF820,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model BF820,215
Width 1.4mm
Mount Type Surface
Series BF820
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 50
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 300V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 50mA
Transistor Configuration Single
onsemi Transistor, 500 mA NPN, 300 V, 3-Pin SOT-23Brand onsemi

Key Features

  • This transistor provides a maximum DC collector current of 50 mA.
  • It supports a maximum collector-emitter voltage of 300 V and maximum collector-base voltage of 300 V.
  • Maximum power dissipation is rated at 250 mW ensuring efficiency in low power applications.
  • The device operates within a temperature range of -65°C to 150°C for robust industrial performance.
  • Compact 3-pin SOT-23 package with dimensions 3 mm length, 1.4 mm width, and 1.1 mm height is ideal for surface-mounted PCB designs.
  • NPN transistor configuration facilitates standard switching and amplification tasks.
  • Minimum DC current gain (hFE) of 50 ensures reliable amplification.
  • Maximum emitter-base voltage is 5 V allowing safe operational limits.

Product Description

Nexperia BF820,215 is a high voltage NPN bipolar transistor designed for industrial and commercial electronic applications requiring compact, efficient switching and amplification.

This transistor features a maximum DC collector current of 50 mA and can withstand up to 300 V collector-emitter voltage, making it suitable for low power, high voltage semiconductor circuits.

The 3-pin SOT-23 surface mount package provides a small footprint with dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height, ideal for modern PCB layouts requiring space saving components.

With a maximum power dissipation of 250 mW and operating temperature range from -65°C to 150°C, this transistor supports reliable operation under demanding conditions, including temperature extremes common in industrial and automotive environments.

The NPN transistor configuration and minimum current gain of 50 support efficient signal amplification and switching in circuits such as power regulation, signal processing, and load driving.

This transistor features a maximum DC collector current of 50 mA. It supports a maximum collector-emitter voltage of 300 V and collector-base voltage of 300 V. Power dissipation capacity is rated at 250 mW for efficient thermal management.

Operates reliably in temperature ranges from -65°C to 150°C suitable for automotive and industrial use. The compact SOT-23 surface mount package facilitates easy automated PCB assembly. Minimum DC current gain (hFE) of 50 ensures consistent amplification performance.

NPN polarity transistor suitable for a wide range of electronic designs. This bipolar transistor is widely used in electronic, semiconductor, power management, and automotive industries for signal switching, amplification, and control circuits.

Explore EnvMart's extensive range of Bipolar Transistors and electronic components ideal for your industrial and commercial projects, with guaranteed quality and compliance.

Nexperia 50 mA NPN Bipolar Transistor 300 V, 3-Pin SOT-23 BF820,215
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Frequently Asked Questions

The maximum DC collector current for this model is 50 mA.

It can withstand a maximum collector-emitter voltage of 300 V.

The maximum power dissipation is rated at 250 mW.

The operating temperature range is from -65°C to 150°C.

The dimensions of the SOT-23 package are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

This model uses an NPN transistor configuration.

The minimum DC current gain (hFE) is 50.

The maximum emitter-base voltage is 5 V.

This transistor has a pin count of 3.

It is designed for surface mounting.

The country of origin for this transistor is India.

This NPN transistor is suitable for applications in signal switching, amplification, and control circuits.

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