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Nexperia High Voltage NPN Bipolar Transistor PMBTA45,215 150 mA 500 V 3-Pin SOT-23

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Nexperia High Voltage NPN Bipolar Transistor PMBTA45,215 150 mA 500 V 3-Pin SOT-23

Name: Nexperia High Voltage NPN Bipolar Transistor PMBTA45,215 150 mA 500 V 3-Pin SOT-23
Brand: Nexperia
SKU: 315024
Price: 0.25 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1.1mm
Length	3mm
Model	PMBTA45,215
Width	1.4mm
Mount Type	Surface
Series	PMBTA45
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	3
Maximum Collector Emitter Voltage Vceo	500V
Minimum DC Current Gain hFE	50
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	500V
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	150mA
Transistor Configuration	Single
Maximum Transition Frequency ft	35MHz

Key Features

Maximum DC collector current of 150 mA ensures reliable switching performance.
Rated for a maximum collector-emitter voltage of 500 V suitable for high voltage circuits.
Compact 3-pin SOT-23 surface mount package fits modern PCB designs.
Typical current gain (hFE) minimum of 50 provides sufficient amplification.
Power dissipation capability of 300 mW supports moderate power applications.
Operating temperature range from -55°C to +150°C for diverse environmental conditions.
Maximum transition frequency of 35 MHz enables moderate frequency switching.
Device dimensions approximately 3 mm length × 1.4 mm width × 1.1 mm height.

Product Description

Nexperia PMBTA45,215 is a silicon-based high voltage NPN bipolar transistor designed for switching and amplification in electronic circuits. It features a maximum collector current of 150 mA and can withstand collector-emitter voltages up to 500 V, suitable for power management and signal processing applications.

The transistor is housed in a compact 3-pin SOT-23 surface mount package, ideal for automated PCB assembly and space-constrained designs. Its typical minimum DC current gain of 50 provides effective signal amplification in various lower power systems.

Capable of dissipating 300 mW of power, the PMBTA45,215 can operate reliably in conditions ranging from -55°C to 150°C, making it suitable for industrial and commercial applications including power supply regulation, audio amplification, and switching circuits.

The device also offers a maximum transition frequency of 35 MHz, enabling it to function efficiently in moderate frequency applications such as communications and control systems. Its physical dimensions (3 mm by 1.4 mm by 1.1 mm) allow for compact circuit layouts without compromising performance.

Maximum DC collector current of 150 mA for reliable current switching. High breakdown voltage up to 500 V between collector and emitter. Surface-mount 3-pin SOT-23 package facilitates easy PCB integration. Minimum current gain (hFE) of 50 ensures adequate amplification.

Power dissipation rated at 300 mW supports moderate power tasks. Wide operating temperature range from -55°C to 150°C for durability. Frequency response up to 35 MHz for moderate frequency electronic circuits. Complies with RoHS environmental standards.

This transistor is ideal for applications in industrial, laboratory, construction, and electronic manufacturing environments where reliable switching and signal amplification are required. The RoHS compliance further ensures its suitability for environmentally conscious design projects.

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