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| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 15.75mm |
| Length | 10.53mm |
| Model | MJE15034G |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | MJE15034 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 350V dc |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Maximum Collector Base Voltage VCBO | 350V dc |
| Maximum Power Dissipation Pd | 50W |
| Maximum DC Collector Current Idc | 8A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
onsemi MJE15034G is a high-performance Bipolar Power Transistor designed primarily as a high-frequency driver in audio amplifiers. Featuring an NPN configuration, this transistor supports a maximum DC collector current of 8 amperes and withstands collector-emitter voltages up to 350 V dc. Packaged in a compact TO-220 3-pin format, it is optimized for through-hole mounting in a variety of electronic assemblies.
This transistor boasts a maximum power dissipation of 50 watts, allowing it to handle considerable power loads without compromising stability. It also provides a minimum DC current gain (hFE) of 100, which ensures efficient signal amplification in circuits requiring reliable performance.
Operating reliably within a broad temperature range from -65°C to 150°C, the MJE15034G is suitable for demanding industrial and commercial environments. Its maximum transition frequency of 1 MHz further caters to high-frequency applications, making it ideal for audio amplifiers, industrial control, and general-purpose switching.
The three-pin TO-220 package facilitates easy insertion and reliable connections in through-hole PCB designs, enhancing assembly convenience. This device, manufactured in China, complies with no specific standards or automotive requirements but is Pb-free, contributing to environmentally conscious designs.
This Bipolar Power Transistor is engineered for industrial, commercial, and audio electronics applications requiring robust switching and amplification solutions. Its high current capacity and voltage ratings make it a dependable component in power regulation and signal amplification tasks.
Maximum DC collector current of 8 amperes for high load handling. Collector-emitter voltage rating of 350 volts suitable for demanding circuits. Compact TO-220 package with three pins for through-hole mounting. NPN transistor polarity configured for versatile amplification tasks.
Maximum power dissipation of 50 watts to ensure robust thermal performance. Minimum DC current gain (hFE) of 100 for efficient signal amplification. Operating temperature range from -65°C to 150°C for wide environmental tolerance.
Bipolar power transistor designed for high-frequency driver use in audio amplifier circuits. Pin count of 3 ensures easy integration into existing hardware setups. Product made in China, Pb-free construction. Discover more electronics components and discrete semiconductors in the Bipolar Power Transistors category at EnvMart.
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