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onsemi Bipolar Power Transistor NPN 8 A 350 V dc TO-220 3-Pin MJE15034G

Category Bipolar Power Transistors Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 15.75mm
Length 10.53mm
Model MJE15034G
Width 4.83mm
Mount Type Through Hole
Series MJE15034
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 350V dc
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V dc
Maximum Collector Base Voltage VCBO 350V dc
Maximum Power Dissipation Pd 50W
Maximum DC Collector Current Idc 8A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Maximum DC collector current of 8 amperes for high load handling.
  • Collector-emitter voltage rating of 350 volts suitable for demanding circuits.
  • Compact TO-220 package with three pins for through-hole mounting.
  • NPN transistor polarity configured for versatile amplification tasks.
  • Maximum power dissipation of 50 watts to ensure robust thermal performance.
  • Minimum DC current gain (hFE) of 100 for efficient signal amplification.
  • Operating temperature range from -65°C to 150°C for wide environmental tolerance.
  • Bipolar power transistor designed for high-frequency driver use in audio amplifier circuits.

Product Description

onsemi MJE15034G is a high-performance Bipolar Power Transistor designed primarily as a high-frequency driver in audio amplifiers. Featuring an NPN configuration, this transistor supports a maximum DC collector current of 8 amperes and withstands collector-emitter voltages up to 350 V dc. Packaged in a compact TO-220 3-pin format, it is optimized for through-hole mounting in a variety of electronic assemblies.

This transistor boasts a maximum power dissipation of 50 watts, allowing it to handle considerable power loads without compromising stability. It also provides a minimum DC current gain (hFE) of 100, which ensures efficient signal amplification in circuits requiring reliable performance.

Operating reliably within a broad temperature range from -65°C to 150°C, the MJE15034G is suitable for demanding industrial and commercial environments. Its maximum transition frequency of 1 MHz further caters to high-frequency applications, making it ideal for audio amplifiers, industrial control, and general-purpose switching.

The three-pin TO-220 package facilitates easy insertion and reliable connections in through-hole PCB designs, enhancing assembly convenience. This device, manufactured in China, complies with no specific standards or automotive requirements but is Pb-free, contributing to environmentally conscious designs.

This Bipolar Power Transistor is engineered for industrial, commercial, and audio electronics applications requiring robust switching and amplification solutions. Its high current capacity and voltage ratings make it a dependable component in power regulation and signal amplification tasks.

Maximum DC collector current of 8 amperes for high load handling. Collector-emitter voltage rating of 350 volts suitable for demanding circuits. Compact TO-220 package with three pins for through-hole mounting. NPN transistor polarity configured for versatile amplification tasks.

Maximum power dissipation of 50 watts to ensure robust thermal performance. Minimum DC current gain (hFE) of 100 for efficient signal amplification. Operating temperature range from -65°C to 150°C for wide environmental tolerance.

Bipolar power transistor designed for high-frequency driver use in audio amplifier circuits. Pin count of 3 ensures easy integration into existing hardware setups. Product made in China, Pb-free construction. Discover more electronics components and discrete semiconductors in the Bipolar Power Transistors category at EnvMart.

onsemi Bipolar Power Transistor NPN 8 A 350 V dc TO-220 3-Pin MJE15034G
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Frequently Asked Questions

The maximum DC collector current for the MJE15034G is 8 amperes, allowing it to handle high load applications effectively.

This model has a collector-emitter voltage rating of 350 volts, making it suitable for demanding circuit applications.

The MJE15034G is packaged in a compact TO-220 format and is designed for through-hole mounting.

The minimum DC current gain (hFE) of this unit is 100, which ensures efficient signal amplification.

It operates reliably within a temperature range from -65°C to 150°C, suitable for various environmental conditions.

The maximum power dissipation for the MJE15034G is 50 watts, ensuring robust thermal performance during operation.

This transistor has a maximum transition frequency of 1 MHz, making it suitable for high-frequency applications.

The dimensions of the MJE15034G are 15.75 mm in height, 10.53 mm in length, and 4.83 mm in width.

The MJE15034G features an NPN transistor polarity configuration, suitable for various amplification tasks.

The maximum emitter-base voltage (VEBO) rating for this model is 5V dc.

This bipolar power transistor is designed for high-frequency driver use in audio amplifier circuits and general-purpose switching applications.

The MJE15034G is manufactured in China and features a Pb-free construction.

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