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ROHM Power Transistor 1 A PNP 50 V 3-Pin SOT-89 Surface Mount 2SAR513PHZGT100
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 1.6mm |
| Length | 4.7mm |
| Model | 2SAR513PHZGT100 |
| Width | 2.7mm |
| Mount Type | Surface |
| Series | 2SAR513PHZG |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -50V |
| Minimum DC Current Gain hFE | 180 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -6V |
| Maximum Collector Base Voltage VCBO | -50V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 500mW |
| Maximum DC Collector Current Idc | -1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 400MHz |
| Nexperia BCX51,115 Bipolar Transistor, -1 A PNP, -45 V, 3-Pin SOT-89Brand | Nexperia |
Key Features
- Maximum power dissipation rating of 500 mW ensuring reliability in low power applications.
- Low saturation voltage VCE(sat) of 400 mV max, suitable for efficient low frequency amplification.
- High transition frequency of 400 MHz supports high-speed switching operations.
- Qualified to automotive standard AEC-Q101 for enhanced quality and reliability.
- Compact dimensions with length 4.7 mm, width 2.7 mm, and height 1.6 mm for space-saving PCB layout.
- Surface mount SOT-89 package with 3 pins enables easy PCB assembly.
- Maximum operating temperature rated at 150°C for robust thermal performance.
- Minimum DC current gain (hFE) of 180 provides amplification stability.
Product Description
The ROHM 2SAR513PHZGT100 is a PNP power transistor designed for efficient low-frequency amplifier and switching applications. It supports a maximum collector current of 1 A and is capable of handling voltages up to 50 V between collector and emitter terminals. The transistor is housed in a compact 3-pin SOT-89 package suitable for surface mount technology.
Featuring a low saturation voltage (VCE(sat)) of 400 mV, this transistor offers increased efficiency in amplifier circuits. Its maximum power dissipation of 500 mW allows safe operation in moderate power applications. The device operates reliably over a wide temperature range with a maximum operating temperature of 150°C.
With a high transition frequency of 400 MHz, the 2SAR513PHZGT100 is designed to perform well in high-speed switching tasks. Its minimum DC current gain (hFE) of 180 ensures consistent gain performance. Additionally, the transistor is qualified to meet the stringent automotive standard AEC-Q101, highlighting its robustness and reliability for automotive electronics and industrial applications.
The compact package dimensions (length 4.7 mm, width 2.7 mm, height 1.6 mm) optimize PCB space usage and facilitate integration into complex circuit designs. This single transistor device is ideal for low-noise, low-voltage amplification, and switching functions in electronic components, power circuits, and automotive systems.
Maximum power dissipation is 500 mW, providing capacity for moderate power handling. Compact SOT-89 surface mount package enabling effective PCB layout and assembly. Compliant with automotive AEC-Q101 standard for high quality and durability.
Supports a maximum emitter-base voltage of 6 V and collector-base voltage of 50 V for reliable operation. Surface mount design suitable for modern electronic manufacturing.
This ROHM power transistor serves applications in electronics, semiconductor devices, automotive circuits, and power management systems. Its technical characteristics make it suitable for industrial and commercial use cases requiring reliable PNP transistor performance. Explore more products in the Bipolar Power Transistor category at EnvMart for related components.
Explore more products in our Bipolar Power Transistors category.
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Frequently Asked Questions
The maximum collector current for the ROHM 2SAR513PHZGT100 is 1 A.
This model has a maximum power dissipation rating of 500 mW, suitable for moderate power applications.
The SOT-89 package dimensions are 4.7 mm in length, 2.7 mm in width, and 1.6 mm in height.
The maximum operating temperature rated for this transistor is 150°C.
The maximum transition frequency of this model is 400 MHz, supporting high-speed switching operations.
The minimum DC current gain (hFE) for the ROHM 2SAR513PHZGT100 is 180, ensuring stable amplification performance.
It can handle a maximum collector-emitter voltage of 50 V and a maximum emitter-base voltage of 6 V.
Yes, it is qualified to the automotive standard AEC-Q101, indicating enhanced quality and reliability.
The ROHM 2SAR513PHZGT100 uses a single transistor configuration.
This model is a PNP type transistor.
The SOT-89 package of this transistor has 3 pins.
It is suitable for low-noise, low-voltage amplification, and switching functions in electronic components and automotive systems.
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