onsemi Power NPN Transistor 4 A 60 V dc TO-225 Through Hole 3-Pin 2N5191G

onsemi 2N5191G is a high-power NPN bipolar transistor designed for applications requiring up to 4 amps collector current and 60 volts collector-emitter voltage. It is housed in a TO-225 package with a 3-pin through-hole mount, ideal for industrial and commercial power amplifier and switching circuits requiring robust and reliable transistor operation.

This single configuration transistor features a minimum DC current gain (hFE) of 10 and can safely dissipate 40 watts of power, making it suitable for a variety of power handling situations. The device operates reliably across a broad temperature range from -65°C to a maximum of 150°C, ensuring performance stability in harsh environmental conditions.

Key electrical characteristics include a maximum collector-base voltage of 60 V dc, maximum emitter-base voltage of 5 V dc, and a maximum transition frequency (ft) of 1 MHz. The package dimensions are 27.73 mm in height, 7.8 mm in length, and 3 mm in width, allowing easy integration onto standard printed circuit boards.

The 2N5191G transistor complements onsemi’s range of bipolar transistors, providing a complementary PNP transistor options with models 2N5194 and 2N5195 for designer versatility. This power transistor is lead-free (Pb-free), supporting environmental compliance in manufacturing.

Designed for use in power amplifier and switching circuits. Single transistor configuration with NPN polarity. TO-225 package type suitable for through-hole mounting. Capable of dissipating up to 40 watts of power. Operating temperature range from -65°C to 150°C.

Low minimum DC current gain hFE of 10. Maximum transition frequency of 1 MHz. Compact size with height 27.73 mm, length 7.8 mm, and width 3 mm. Complemented by PNP transistors 2N5194 and 2N5195 for circuit design flexibility.

Lead-free, Pb-free device compliant with environmental standards.

This product is suitable for industrial, commercial, and electronic manufacturing use cases where reliable high-current and high-voltage transistor switching and amplification are required. It is widely used in power management, motor control, and amplification circuits within electrical and electronics engineering sectors.

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