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ROHM 10 A NPN Transistor, 30 V, 3-Pin DPAK Surface Mount Power Transistor 2SCR582D3TL1
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 2.4mm |
| Length | 6.8mm |
| Model | 2SCR582D3TL1 |
| Width | 10.4mm |
| Mount Type | Surface |
| Series | 2SCR582D |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 30V |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 30V |
| Maximum Power Dissipation Pd | 10W |
| Maximum DC Collector Current Idc | 10A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 250MHz |
Key Features
- Maximum DC collector current of 10 A supporting substantial power loads.
- Collector-emitter voltage rating of 30 V ensures reliable switching performance.
- Power dissipation capability of 10 W for efficient heat management.
- High minimum DC current gain (hFE) of 200 improves amplification efficiency.
- Operating temperature range extends from -55°C to 150°C for versatile environments.
- Compact dimensions with a 6.8 mm length, 10.4 mm width, and 2.4 mm height.
- Surface mount design (TO-252, DPAK) for modern PCB assembly compatibility.
- Suitable for use in low frequency amplifier and power driver circuits.
Product Description
The ROHM 2SCR582D3TL1 bipolar power transistor is a high-performance NPN device designed for power semiconductor applications. It is housed in a TO-252 (DPAK) surface mount package featuring three pins that facilitate easy mounting and integration in compact circuit boards.
This transistor supports a maximum DC collector current of 10 A and a collector-emitter voltage rating of 30 V. It can dissipate up to 10 W of power, making it ideal for efficient power handling in various electronic circuits. With a minimum DC current gain (hFE) of 200, the transistor offers excellent amplification suitable for low frequency amplifier and power driver roles.
The device is engineered to operate reliably in extreme temperature ranges, from -55°C to 150°C, which makes it suitable for diverse industrial and commercial environments. Its physical dimensions are optimized for space-saving designs, with a height of 2.4 mm, length of 6.8 mm, and width of 10.4 mm.
This transistor’s surface mount package ensures it is compatible with automated PCB assembly processes, enhancing production efficiency. It finds applications across industrial electronics, power supply management, motor control circuits, and general-purpose amplification.
Maximum DC collector current: 10 A. Maximum collector-emitter voltage: 30 V. Power dissipation: 10 W. Minimum DC current gain (hFE): 200. Operating temperature range: -55°C to 150°C. Packaged in TO-252 (DPAK) surface mount package with 3 pins.
Compact size: 6.8 mm length x 10.4 mm width x 2.4 mm height. Applications in power drivers and low frequency amplifier circuits.
This ROHM transistor is a reliable choice for professionals seeking durable and high-performance Bipolar Power Transistors that enhance circuit functionality in demanding environments. Explore more semiconductors and electronic components at EnvMart to suit your industrial and commercial needs.
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Frequently Asked Questions
The maximum DC collector current for this model is 10 A.
This transistor has a collector-emitter voltage rating of 30 V.
It can dissipate up to 10 W of power, which is suitable for efficient heat management.
The minimum DC current gain (hFE) for this model is 200, enhancing amplification efficiency.
The operating temperature range extends from -55°C to 150°C, allowing for versatile applications.
The dimensions are 6.8 mm in length, 10.4 mm in width, and 2.4 mm in height.
It is housed in a TO-252 (DPAK) surface mount package, featuring three pins for easy integration.
This model is suitable for use in low frequency amplifier and power driver circuits.
The maximum transition frequency for this transistor is 250 MHz.
The maximum emitter-base voltage (VEBO) is 6 V.
This device features a single transistor configuration.
This model is an NPN type transistor.
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