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onsemi Bipolar Transistor PNP, Maximum DC Collector Current -5 A, Max Collector Emitter Voltage -100 V, TO-220 3-Pin MJF127G
Specifications
| Country of Origin | Korea |
|---|---|
| Brand | onsemi |
| Height | 29.85mm |
| Length | 10.63mm |
| Model | MJF127G |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -100V |
| Minimum DC Current Gain hFE | 1000 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V dc |
| Maximum Collector Base Voltage VCBO | 100V dc |
| Maximum Power Dissipation Pd | 30W |
| Maximum DC Collector Current Idc | -5A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
Key Features
- Designed for general-purpose amplifier and switching applications.
- Maximum collector current of negative 5 amperes for reliable high current operation.
- Maximum collector-emitter voltage rating of negative 100 volts.
- High DC current gain of 1000 minimum at IC = 3 A.
- Stores electrical isolation from heat sink; no isolating washers required.
- Maximum power dissipation is 30 watts ensuring thermal reliability.
- Through hole mounting type with 3 pins in a durable TO-220 package.
- Wide operating temperature range from -65°C to 150°C.
Product Description
onsemi MJF127G Bipolar Transistor is a high-gain PNP Darlington power transistor designed for use in general-purpose amplifiers and switching circuits. This device provides a maximum DC collector current of -5 amperes and a collector-emitter voltage rating of -100 volts, packaged in a robust TO-220 3-pin form factor with through-hole mounting capability. The transistor offers excellent electrical isolation from the heat sink, eliminating the need for isolating washers and thereby reducing system cost.
The MJF127G features a high minimum DC current gain of 1000 at an IC of 3 amperes and a maximum power dissipation of 30 watts, supporting effective thermal management during high power operation. Its operating temperature range from -65°C to 150°C allows deployment in diverse industrial conditions. With a maximum transition frequency of 1 MHz, it offers good switching performance suitable for a variety of electronic applications.
The TO-220 package dimensions include a height of 29.85 mm, width of 4.9 mm, and length of 10.63 mm, making it compatible with standard mounting hardware and PCB layouts. The transistor polarity is PNP, and the device provides a maximum collector base voltage (VCBO) of 100 V DC and a maximum emitter base voltage (VEBO) of 5 V DC.
It is RoHS compliant with Pb-free packaging, supporting environmentally responsible use. Designed for general-purpose amplifier and switching applications. Maximum collector current of negative 5 amperes for reliable high current operation.
Maximum collector-emitter voltage rating of negative 100 volts. High DC current gain of 1000 minimum at IC = 3 A. Stores electrical isolation from heat sink; no isolating washers required. Maximum power dissipation is 30 watts ensuring thermal reliability.
Through hole mounting type with 3 pins in a durable TO-220 package. Wide operating temperature range from -65°C to 150°C. Maximum transition frequency 1 megahertz for switching performance. Manufactured in Korea with Pb-free compliant packaging.
Browse our extensive Electronics & Electricals category for more Bipolar Power Transistor options and related semiconductor products from onsemi and other trusted manufacturers on EnvMart.
Explore more products in our Bipolar Power Transistors category.
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Frequently Asked Questions
The maximum DC collector current of the MJF127G transistor is -5 amperes.
The maximum collector-emitter voltage rating for the MJF127G is -100 volts.
The minimum DC current gain for the MJF127G at an IC of 3 A is 1000.
The maximum power dissipation of the MJF127G is 30 watts.
The MJF127G operates within a temperature range of -65°C to 150°C.
The MJF127G comes in a TO-220 package type with a through-hole mounting style.
The TO-220 package dimensions are 29.85 mm in height, 4.9 mm in width, and 10.63 mm in length.
The maximum transition frequency of the MJF127G is 1 MHz.
The maximum emitter base voltage (VEBO) for the MJF127G is 5 V DC.
Yes, the MJF127G is RoHS compliant with Pb-free packaging.
The MJF127G uses a single transistor configuration.
The MJF127G is manufactured in Korea.
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