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ROHM 250 V 100 mA Surface Mount Rectifier & Schottky Diode Recovery SOD-323-2 RF01VM2SFHTE-17
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RF01VM2SFHTE-17 |
| Mount Type | Surface |
| Series | RF01VM2S |
| Maximum Operating Temperature | 150°C |
| Package Type | SOD-323-2 |
| Minimum Operating Temperature | -55°C |
| Maximum Continuous Forward Current If | 100mA |
| Peak Reverse Repetitive Voltage Vrrm | 250V |
| Diode Configuration | Single |
| Rectifier Type | Recovery |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1A |
| Maximum Forward Voltage Vf | 1.2V |
Key Features
- Features a single diode configuration for reliable rectification.
- Includes a recovery type rectifier for fast switching performance.
- Package type is compact SOD-323-2 suitable for surface mount technology.
- Maximum forward voltage is 1.2 V ensuring efficient operation.
- Operates safely across temperature range from -55°C to 150°C.
- Capable of handling peak non-repetitive forward surge current of 1 A.
- Compliance with no specific industry approvals or automotive standards.
- Designed as silicon epitaxial planar type for enhanced electrical characteristics.
Product Description
The ROHM RF01VM2SFHTE-17 is a surface mount rectifier and Schottky diode designed for efficient electrical power conversion. This model features a peak reverse repetitive voltage rating of 250 V and a maximum continuous forward current of 100 mA, making it ideal for applications demanding fast recovery and high current capability within a compact SOD-323-2 package.
Constructed as a silicon epitaxial planar device, it offers fast switching speeds suitable for modern electronic circuits and power connectors. Its forward voltage drop of 1.2 V allows for efficient conduction with minimal power loss. Operating safely over an extended temperature range from -55°C up to 150°C enables reliable performance in various challenging industrial environments.
The diode is designed for mounting on surface mount PCBs and supports a peak non-repetitive forward surge current of 1 A, accommodating transient overloads. Though it does not carry specific automotive or industry certifications, its robust design resembles automotive grade performance characteristics, complying with the AEC-Q101 standard as a reference point for reliability.
This device is widely applicable in electronic components, semiconductor discrete devices, and power connectors sectors, suited for fast recovery rectification needs in diverse industrial, laboratory, manufacturing, and electrical power management systems.
Single diode configuration for precise rectification. High-speed recovery rectifier type technology. Compact and lightweight SOD-323-2 surface mount package. Wide operating temperature from -55°C to 150°C. Supports maximum forward voltage of 1.2 V for efficiency.
Peak surge current capability of 1 A for transient loads. Design suitable for industrial, electrical, and electronic applications. Silicon epitaxial planar structure for stable electronic properties. No automotive or standards approvals explicitly applied.
For comprehensive electronic component sourcing, explore related ROHM Schottky diode products and accessories in the Electronics & Electricals category at EnvMart.
Explore more products in our Schottky Diodes & Rectifiers category.
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Frequently Asked Questions
The maximum reverse repetitive voltage rating of this diode is 250 V.
This model can handle a maximum continuous forward current of 100 mA.
It comes in a compact SOD-323-2 package suitable for surface mount technology.
It operates safely over a temperature range from -55°C to 150°C.
The diode supports a peak non-repetitive forward surge current of 1 A.
This model features a recovery type rectifier designed for fast switching performance.
The maximum forward voltage drop is 1.2 V, allowing for efficient operation.
It has a single diode configuration for reliable rectification.
While it does not carry specific automotive certifications, it resembles automotive grade performance characteristics.
It is designed as a silicon epitaxial planar type for enhanced electrical characteristics.
It is suitable for use in electronic components, semiconductor discrete devices, and power connectors.
The country of origin for this product is India.
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