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Nexperia Resistor-Equipped NPN Transistor, 3-Pin DFN1412D-3, 100 mA, 50 V PDTC123JQC-QZ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PDTC123JQC-QZ
Mount Type Surface
Series PDTC123J
Maximum Operating Temperature 150°C
Package Type DFN1412D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc 100mA
Transistor Configuration NPN
Maximum Transition Frequency ft 230MHz

Key Features

  • Supports maximum DC collector current of 100 mA.
  • Maximum collector emitter voltage rated at 50 V.
  • Surface mount package type DFN1412D-3 with low profile height of 0.5 mm.
  • Built-in resistors reduce component count and simplify circuit design.
  • Minimum DC current gain (hFE) is 100 for efficient switching.
  • Automotive grade with AEC-Q101 qualification for reliability.
  • Operating temperature range from -55°C to 150°C suitable for harsh environments.
  • Maximum transition frequency of 230 MHz supports high-speed applications.

Product Description

Nexperia PDTC123JQC-QZ resistor-equipped transistor is a NPN bipolar transistor designed in a compact 3-pin DFN1412D-3 surface mount package. It supports a maximum DC collector current of 100 mA and can withstand voltages up to 50 V, providing reliable performance in digital switching and controlling applications.

The built-in resistors integrated into the device simplify circuit design and reduce total component count, improving manufacturing efficiency and lowering assembly costs. Its low package height of 0.5 mm facilitates automatic optical inspection (AOI) and is ideal for high-density PCB layouts.

This transistor is qualified to automotive standard AEC-Q101 ensuring robustness for automotive and industrial use. It operates reliably across a temperature range of -55°C to 150°C, capable of withstanding harsh environmental conditions.

With a minimum DC current gain (hFE) of 100 and a high maximum transition frequency of 230 MHz, this device is suitable for high-speed switching tasks, making it an efficient choice for electronic components requiring medium power switching capabilities.

Typical use cases include digital logic circuits, controlling IC inputs, switching loads in consumer electronics, and automotive electronics. It serves as a cost-effective and performance-optimized alternative to the BC857 transistor family.

Supports maximum DC collector current of 100 mA. Maximum collector emitter voltage rated at 50 V. Surface mount package type DFN1412D-3 with low profile height of 0.5 mm. Built-in resistors reduce component count and simplify circuit design.

Minimum DC current gain (hFE) is 100 for efficient switching. Automotive grade with AEC-Q101 qualification for reliability. Operating temperature range from -55°C to 150°C suitable for harsh environments. Maximum transition frequency of 230 MHz supports high-speed applications.

Ideal for digital applications such as controlling IC inputs and switching loads. Cost-saving alternative for BC857 transistor series. Explore Nexperia products and related Bipolar Transistors to find solutions for your electronic design and industrial needs on EnvMart.

Nexperia Resistor-Equipped NPN Transistor, 3-Pin DFN1412D-3, 100 mA, 50 V PDTC123JQC-QZ
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

It has a maximum collector emitter voltage rating of 50 V.

This transistor operates reliably within a temperature range of -55°C to 150°C.

The maximum transition frequency is 230 MHz, making it suitable for high-speed applications.

It is packaged in a 3-pin DFN1412D-3 surface mount type with a low profile height of 0.5 mm.

The minimum DC current gain (hFE) is 100, which supports efficient switching.

Yes, it is qualified to the automotive standard AEC-Q101, ensuring reliability for automotive applications.

The maximum emitter base voltage (VEBO) is rated at 5 V.

It is suitable for digital logic circuits, controlling IC inputs, and switching loads in consumer and automotive electronics.

The country of origin for this transistor is India.

It meets RoHS standards, ensuring compliance with environmental regulations.

The transistor configuration is NPN, which is common for various switching applications.

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