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Nexperia PNP General-Purpose Transistor -100 mA, -45 V, 3-Pin DFN1412D-3 Surface Mount BC857BQC-QZ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model BC857BQC-QZ
Mount Type Surface
Series BC857xQC-Q
Maximum Operating Temperature 150°C
Package Type DFN1412D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc -100mA
Transistor Configuration PNP

Key Features

  • Maximum DC collector current is -100 mA for moderate power handling.
  • Maximum collector-emitter voltage of -45 V suits low-voltage switching.
  • Compact DFN1412D-3 package features side-wettable flanks for reliable soldering.
  • Surface mount type enables automated assembly and space-saving on PCBs.
  • Low package height of 0.5 mm ideal for low-profile designs.
  • Gain (hFE) of 220 ensures consistent amplification performance.
  • Operates reliably in temperatures from -55°C to 150°C.
  • Qualified to AEC-Q101 automotive standard for high reliability.

Product Description

The Nexperia BC857BQC-QZ is a PNP bipolar transistor designed for general-purpose switching and amplification in compact electronic circuits. Packaged in a low-profile 3-Pin DFN1412D-3 leadless surface mount device with side-wettable flanks, it supports automated optical inspection and automatic insertion on assembly lines.

This transistor handles a maximum DC collector current of -100 mA and can withstand a maximum collector-emitter voltage of -45 V, making it suitable for low-voltage control and signal amplification. The low package height of 0.5 mm makes it well-suited for applications where PCB space is limited.

Offering a minimum DC current gain (hFE) of 220 and operating temperature range from -55°C to 150°C, this device is qualified under AEC-Q101 automotive standards, ensuring robustness in harsh environments. Its RoHS compliance ensures environmental safety.

Thanks to the surface mount package and small footprint, the BC857BQC-QZ is ideal for automotive electronics, industrial controllers, and compact consumer products. Maximum DC collector current is -100 mA for moderate power handling.

Maximum collector-emitter voltage of -45 V suits low-voltage switching. Compact DFN1412D-3 package features side-wettable flanks for reliable soldering. Surface mount type enables automated assembly and space-saving on PCBs.

Low package height of 0.5 mm ideal for low-profile designs. Gain (hFE) of 220 ensures consistent amplification performance. Operates reliably in temperatures from -55°C to 150°C. Qualified to AEC-Q101 automotive standard for high reliability.

RoHS compliant and suitable for automotive and general electronic applications.

Applicable across industrial, automotive, consumer electronics, and manufacturing sectors, this transistor supports efficient and reliable circuit design. Explore more in EnvMart's semiconductor category for broader component selections.

Explore more products in our Bipolar Transistors category.

Nexperia PNP General-Purpose Transistor -100 mA, -45 V, 3-Pin DFN1412D-3 Surface Mount BC857BQC-QZ
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Frequently Asked Questions

The maximum DC collector current for this model is -100 mA.

It can withstand a maximum collector-emitter voltage of -45 V.

The minimum DC current gain (hFE) of this transistor is 220.

It operates reliably within a temperature range from -55°C to 150°C.

This transistor is packaged in a compact DFN1412D-3 surface mount package.

Yes, this model is RoHS compliant, ensuring environmental safety.

It is qualified to the AEC-Q101 automotive standard for high reliability.

This transistor has a pin count of 3.

The maximum emitter-base voltage (VEBO) is -6 V.

It is suitable for general-purpose switching and amplification in automotive electronics, industrial controllers, and compact consumer products.

The configuration of this transistor is PNP.

The maximum collector-base voltage (VCBO) is -50 V.

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