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Nexperia PNP Bipolar Transistor 100 mA, 45 V, 3-Pin DFN1412D-3 Surface Mount BC857CQC-QZ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model BC857CQC-QZ
Mount Type Surface
Series BC857xQC-Q
Maximum Operating Temperature 150°C
Package Type DFN1412D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 420
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc -100mA
Transistor Configuration PNP

Key Features

  • Maximum collector current of 100 mA ensures efficient switching and amplification.
  • Maximum collector-emitter voltage of 45 V suitable for low-voltage applications.
  • Compact DFN1412D-3 leadless surface-mounted package offers a small footprint and side-wettable flanks.
  • Qualified according to AEC-Q101 automotive standard for reliable performance in automotive uses.
  • High gain with minimum DC current gain (hFE) of 420 for stable signal amplification.
  • Wide operating temperature range from -55°C to 150°C supports harsh environmental conditions.
  • Low package height of 0.5 mm reduces board space usage and improves thermal dissipation.
  • Ideal for general-purpose switching, amplification, and space-restricted applications.

Product Description

Nexperia BC857CQC-QZ PNP Bipolar Transistor, housed in an ultra-small DFN1412D-3 (SOT8009) leadless surface mount package, is engineered for advanced electronic circuit designs requiring space efficiency and robustness.

This transistor supports a maximum collector current of 100 mA and a maximum collector-emitter voltage of 45 V, ensuring effective operation in low voltage switching and amplification circuits.

Its compact leadless DFN1412D-3 package provides a small footprint with side-wettable flanks, facilitating reliable solder joint inspection using automatic optical inspection (AOI) technologies.

Certified under AEC-Q101 automotive standards, this component is suitable for automotive and other demanding industrial applications, offering high reliability over a wide temperature range from -55°C to 150°C.

Featuring a minimum DC current gain (hFE) of 420, the BC857CQC-QZ transistor delivers stable and high amplification efficiency for signal processing in various general-purpose applications.

The device’s low package height of 0.5 mm assists in reducing overall board thickness and enhances thermal dissipation, making it ideal for space-restricted designs. Being RoHS compliant, this transistor meets environmental regulations, ensuring safe and sustainable use in manufacturing.

Commonly employed in industrial and automotive electronics, this transistor is well-suited for power management, signal switching, and amplification tasks in electronic assemblies requiring high reliability and small form factor components.

Maximum collector current of 100 mA ensures efficient switching and amplification. Maximum collector-emitter voltage of 45 V suitable for low-voltage applications. Compact DFN1412D-3 leadless surface-mounted package offers a small footprint and side-wettable flanks.

Qualified according to AEC-Q101 automotive standard for reliable performance in automotive uses. High gain with minimum DC current gain (hFE) of 420 for stable signal amplification. Wide operating temperature range from -55°C to 150°C supports harsh environmental conditions.

Low package height of 0.5 mm reduces board space usage and improves thermal dissipation. Ideal for general-purpose switching, amplification, and space-restricted applications. Compliant with RoHS standards ensuring environmental safety and regulatory compliance.

Explore the Electronics & Electricals category at EnvMart for a wide range of semiconductor components including discrete and Bipolar Transistors to support your electronic design needs.

Nexperia PNP Bipolar Transistor 100 mA, 45 V, 3-Pin DFN1412D-3 Surface Mount BC857CQC-QZ
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Frequently Asked Questions

The maximum collector current for this model is 100 mA, ensuring efficient switching and amplification in various applications.

This transistor has a maximum collector-emitter voltage of 45 V, making it suitable for low-voltage applications.

The BC857CQC-QZ is housed in a compact DFN1412D-3 leadless surface mount package, which offers a small footprint and side-wettable flanks.

It operates over a wide temperature range from -55°C to 150°C, supporting harsh environmental conditions.

The minimum DC current gain (hFE) of this model is 420, providing stable signal amplification.

Yes, it is RoHS compliant and qualified according to the AEC-Q101 automotive standard, ensuring reliability in automotive applications.

This transistor has a pin count of 3, which is typical for its configuration.

The maximum emitter-base voltage (VEBO) is -6 V, which is important for its operation in circuits.

This transistor is ideal for general-purpose switching, amplification, and applications where space is restricted.

The package height of this model is 0.5 mm, which helps reduce board space usage and improves thermal dissipation.

It is a PNP bipolar transistor, designed for efficient signal processing and amplification tasks.

The country of origin for this transistor is India, reflecting its manufacturing location.

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