onsemi IGBT 650 V, 3-Pin TO-247-3L Surface Mount FGHL40T65MQDT

onsemi FGHL40T65MQDT is a robust Insulated Gate Bipolar Transistor (IGBT) designed for efficient switching at high voltages up to 650 V and power dissipation capabilities of 238 W. Packaged in a TO-247-3L 3-pin housing for surface mounting, this component offers reliable performance in diverse power electronics applications.

The device functions over a broad temperature range from -55°C to 175°C, making it suitable for demanding environments. Its balanced optimization of conduction and switching losses ensures superior efficiency and low power wastage during operation.

Key design considerations include a positive temperature coefficient that facilitates easy paralleling in applications requiring high current handling. The maximum gate-emitter voltage tolerance of 20 V ensures control signal robustness. Compliance with RoHS standards underscores adherence to environmental regulations.

This IGBT is ideally suited for industry applications such as solar inverters, uninterrupted power supplies (UPS), electric vehicle (EV) charging stations, and energy storage systems (ESS). Its compact dimensions of 4.82 mm height, 20.82 mm width, and 15.87 mm length fit well within modern electronic assemblies.

This IGBT supports a maximum collector-emitter voltage of 650 V. It provides maximum power dissipation of 238 W. Mount type is surface, with TO-247-3L package configuration. Operates from -55°C to 175°C temperature range.

Pin count is 3, facilitating compact connection footprint. Compliant with RoHS environmental regulations. Not suitable for automotive standard applications.

Its precise performance and engineering quality make the onsemi FGHL40T65MQDT a reliable choice for power conversion and electronic switch applications in industrial and commercial electronic systems. Explore more semiconductors from onsemi on EnvMart for your power electronics projects.