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Infineon N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN Package IQE030N06NM5CGATMA1

Category Semiconductor Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Length 3.3mm
Model IQE030N06NM5CGATMA1
Mount Type Surface
Series IQE
Maximum Operating Temperature 150°C
Package Type PQFN
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 253A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 0.85mΩ
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 16V
Forward Voltage Vf 730mV

Key Features

  • Supports high current with maximum continuous drain current of 253 A.
  • Operates at a maximum drain-source voltage of 30 V for efficient switching.
  • Features low maximum drain-source resistance of 0.85 milliohms for reduced conduction losses.
  • Capable of dissipating up to 81 W power, facilitating thermal management.
  • Designed for surface mount with 8-pin PQFN package to optimize PCB layout.
  • Wide operating temperature range from -55°C to 150°C for versatile applications.
  • High maximum gate-source voltage of 16 V ensures robust gate drive tolerance.
  • Typical gate charge of 80 nC supports efficient gate switching performance.

Product Description

Infineon IQE030N06NM5CGATMA1 is a high-performance N-Channel MOSFET designed for demanding electronic applications requiring high current handling and low voltage operation. Featuring a maximum continuous drain current of 253 A and maximum drain-source voltage of 30 V, this MOSFET is optimized for efficient power management in industrial, automotive, and electronic system designs.

Housed in an 8-pin PQFN surface mount package measuring 3.3 mm in length, this device offers reduced conduction losses due to its low maximum drain-source resistance of 0.85 milliohms and can dissipate a maximum power of 81 W, supporting thermal efficiency.

The wide operating temperature range from -55°C to 150°C, along with a maximum gate-source voltage rating of 16 V and typical gate charge of 80 nC, enable robust gate drive compatibility and high switching performance.

Designed with compliance to RoHS and the automotive AEC-Q101 standard, the MOSFET is suitable for reliable use in automotive and industrial equipment. Its compact form factor, advanced power density, and enhanced thermal capability make it ideal for applications in power conversion, motor drives, automotive electronics, and general-purpose switching.

Supports high current with maximum continuous drain current of 253 A. Operates efficiently at maximum drain-source voltage of 30 V. Low conduction losses ensured by maximum drain-source resistance of 0.85 mΩ. Power dissipation up to 81 W for effective thermal handling.

8-pin PQFN surface mount package for improved PCB layout and heat dissipation. Wide temperature range from -55°C to 150°C for harsh environments. High gate tolerance with 16 V maximum gate-source voltage. Typical gate charge of 80 nC for optimized switching speed.

RoHS compliant and meets automotive AEC-Q101 standard for automotive suitability. Compact size promoting high power density in applications.

This Infineon MOSFET is a reliable component choice for high-performance semiconductor applications in automotive, industrial manufacturing, power electronics, and consumer electronics sectors. Its robust electrical characteristics ensure efficient power switching and thermal stability, thus aiding in design flexibility for engineers and system integrators.

For further product details and technical documents, designers and engineers can utilize official Infineon resources and DesignSpark software for PCB and 3D mechanical designs, enhancing application development and integration.

Explore more Semiconductor and MOSFET options at EnvMart to meet diverse industrial and electronic component needs.

Infineon N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN Package IQE030N06NM5CGATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 253 A.

It operates at a maximum drain-source voltage of 30 V.

The maximum drain-source resistance is 0.85 milliohms, which helps reduce conduction losses.

This model can dissipate up to 81 W of power, facilitating effective thermal management.

It is housed in an 8-pin PQFN surface mount package.

The operating temperature range is from -55°C to 150°C.

The maximum gate-source voltage is rated at 16 V.

The typical gate charge is 80 nC, supporting efficient gate switching performance.

Yes, it is RoHS compliant and meets the automotive AEC-Q101 standard.

This model is suitable for applications in power conversion, motor drives, automotive electronics, and general-purpose switching.

The country of origin for this MOSFET is India.

This model belongs to the IQE series.

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