Nexperia Bipolar Transistor PNP -100 mA, -45 V, 3-Pin SOT-8009 BC857BQCZ

Nexperia BC857BQCZ Bipolar Transistor is a PNP configuration transistor designed for discrete semiconductor applications. It supports a maximum DC collector current of -100 mA and maximum collector emitter voltage of -45 V, packaged in a 3-Pin SOT-8009 surface mount device with side-wettable flanks for excellent solderability. The device is fabricated for high power dissipation capability and robust operation within -55°C to 150°C temperature range suitable for demanding environments.

The transistor features a minimum DC current gain (hFE) of 220 ensuring efficient amplification in various circuits. Its compact DFN1412D-3 package reduces PCB footprint and overall device height to just 0.5 mm, ideal for miniaturized electronic assemblies. The design is compatible with automatic optical inspection (AOI) for high volume manufacturing quality control.

This product complies with the RoHS directive, ensuring it meets environmental regulations for hazardous substances. It also meets the automotive AEC-Q101 standard qualifying it for automotive and other high-reliability applications. The BC857BQCZ transistor is well suited for industrial, automotive, and consumer electronics applications requiring a reliable PNP transistor with moderate current and voltage ratings.

Compact 3-pin SOT-8009 surface mount package with side-wettable flanks. High power dissipation capability for robust performance. Operating temperature range from -55°C to +150°C. Minimum DC gain (hFE) of 220 for effective amplification.

Compliant with RoHS environmental standards. AEC-Q101 automotive qualified ensuring reliability. Optimized for automatic optical inspection (AOI) in manufacturing. Explore more Bipolar Transistors and semiconductor devices at EnvMart to suit your industrial and electronic design requirements.