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Nexperia PNP Transistor 3-Pin SOT-23, Maximum DC Collector Current 100 mA, Maximum Collector Emitter Voltage 65 V, BC857B,235

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model BC857B,235
Width 1.4mm
Mount Type Surface
Series BC85
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals IEC 60134
Pin Count 3
Maximum Collector Emitter Voltage Vceo -65V
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO 80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi BC857BLT1G Transistor, -100 mA PNP, -45 V, 3-Pin SOT-23Brand onsemi

Key Features

  • Surface mount transistor with compact SOT-23 plastic package.
  • Maximum power dissipation of 250 mW suitable for efficient thermal management.
  • Supports a maximum transition frequency of 100 MHz for high-speed switching.
  • Operating temperature range from -65°C to 150°C for robust industrial use.
  • Designed to meet automotive standard AEC-Q101 for quality assurance.
  • Single transistor configuration with PNP polarity ideal for amplification and switching.

Product Description

The Nexperia BC857B,235 is a PNP bipolar transistor encapsulated in a small 3-pin SOT-23 (TO-236AB) surface mount package. This transistor is engineered for low current and low voltage applications with a Maximum DC Collector Current of 100 mA and a Collector Emitter Voltage of 65 V, making it suitable for general-purpose amplification and switching tasks.

The device offers a power dissipation capacity of 250 mW and a transition frequency up to 100 MHz, providing efficient performance in high-speed electronic circuits. Its wide operating temperature range from -65°C to 150°C ensures reliability across harsh environmental conditions commonly encountered in industrial and automotive sectors.

Compliant with the IEC 60134 standard and automotive-grade AEC-Q101 certification, the BC857B,235 transistor guarantees quality and durability. Its compact SOT-23 package with precise dimensions (3 mm length, 1.4 mm width, 1.1 mm height) allows seamless integration on densely populated printed circuit boards.

This transistor operates with single PNP polarity configuration, typically used within amplification stages, switching applications, and signal processing tasks in electronic devices.

Surface-mounted SOT-23 package optimizes PCB real estate. Handles collector currents up to 100 mA safely. Stable operation over extended temperature ranges. High cut-off frequency suitable for RF and switching circuits. Compliance with international and automotive standards ensures quality and reliability.

This bipolar transistor is widely applicable in electronic component assemblies across industrial manufacturing, automotive electronics, communication equipment, and consumer electronics sectors.

Explore more Nexperia bipolar transistor products in the Electronics & Electricals category on EnvMart to find components that fit your project requirements precisely.

Explore more products in our Bipolar Transistors category.

Nexperia PNP Transistor 3-Pin SOT-23, Maximum DC Collector Current 100 mA, Maximum Collector Emitter Voltage 65 V, BC857B,235
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

The maximum collector emitter voltage is 65 V.

It has a maximum power dissipation capacity of 250 mW.

The operating temperature range is from -65°C to 150°C.

This model is encapsulated in a SOT-23 surface mount package.

The maximum transition frequency is 100 MHz, suitable for high-speed switching applications.

It complies with the IEC 60134 standard and is certified to the automotive standard AEC-Q101.

The height of the SOT-23 package is 1.1 mm.

The width is 1.4 mm and the length is 3 mm.

It is configured as a single PNP transistor, ideal for amplification and switching tasks.

This transistor is widely applicable in amplification stages, switching applications, and signal processing tasks in electronic devices.

The maximum emitter base voltage is -5 V.

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