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Infineon CoolMOS N-Channel MOSFET, 7.6 A, 500 V, 3-Pin TO-220 IPAN50R500CEXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 29.85mm |
| Length | 16.1mm |
| Model | IPAN50R500CEXKSA1 |
| Width | 4.8mm |
| Mount Type | Through Hole |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.6A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 500mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 28W |
| Typical Gate Charge Qg @ Vgs | 18.7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 850mV |
Key Features
- High efficiency superjunction MOSFET for fast switching applications.
- Reduced energy stored in output capacitance to minimize switching losses.
- High body diode ruggedness for improved durability.
- Low reverse recovery charge for efficient performance.
- Low gate charge allowing lower driving power requirements.
- Suitable for through hole mount in power electronic circuits.
- Operating temperature range from -55°C to 150°C for versatile applications.
- Maximum power dissipation of 28 W for robust thermal handling.
Product Description
Infineon IPAN50R500CEXKSA1 CoolMOS N-Channel MOSFET is a reliable semiconductor device delivering a continuous drain current of 7.6 A and a maximum drain-source voltage of 500 V.
Housed in a 3-pin TO-220 package designed for through-hole mounting, this MOSFET leverages superjunction technology to offer high-speed switching capabilities while maintaining ease of use and excellent cost-performance ratio.
The device features reduced energy stored in output capacitance (Eoss), high body diode ruggedness, low reverse recovery charge (Qrr), and a typical gate charge (Qg) of 18.7 nC at Vgs, resulting in efficient switching and power management.
It operates reliably across a wide temperature range from -55°C to 150°C and provides a maximum power dissipation rating of 28 W, making it suited for industrial, laboratory, and commercial power electronics, as well as HVAC and manufacturing applications.
High efficiency superjunction MOSFET for fast switching applications. Reduced energy stored in output capacitance minimizes switching losses. High body diode ruggedness enhances durability under load. Low reverse recovery charge improves energy efficiency.
Low typical gate charge reduces driving power requirements. Through-hole mount suitable for robust circuit assembly. Wide operating temperature range from -55°C to 150°C. Maximum power dissipation of 28 W supports demanding applications.
Infineon CoolMOS MOSFETs are widely used in power management and switching circuits within industries such as electronics manufacturing, energy conversion, automotive electronics, and HVAC systems.
Explore our semiconductor category for a comprehensive range of discrete Semiconductors, including MOSFETs designed for diverse industrial and commercial uses.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon CoolMOS N-Channel MOSFET is 7.6 A.
This model has a maximum drain-source voltage rating of 500 V.
The typical gate charge (Qg) at Vgs for this MOSFET is 18.7 nC.
The operating temperature range for the Infineon CoolMOS MOSFET is from -55°C to 150°C.
This model is housed in a 3-pin TO-220 package designed for through-hole mounting.
The maximum power dissipation rating for this MOSFET is 28 W.
The forward voltage (Vf) of the body diode is 850 mV.
The maximum gate-source voltage (Vgs) for this device is 20 V.
The dimensions of this model are 29.85 mm in height, 16.1 mm in length, and 4.8 mm in width.
It is suitable for power management and switching circuits in industries such as electronics manufacturing, energy conversion, automotive electronics, and HVAC systems.
The channel type of this device is N-channel.
The maximum drain-source resistance (Rds) for this model is 500 mΩ.
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