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Renesas Electronics MOSFET Gate Driver 4 Outputs 2.5 A 20-Pin SOIC 15V HIP4081AIBZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Renesas Electronics |
| Height | 2.35mm |
| Length | 13mm |
| Model | HIP4081AIBZ |
| Width | 7.6mm |
| Mount Type | Surface |
| Series | HIP4081A |
| Output Current | 2.5A |
| Maximum Operating Temperature | 85°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -40°C |
| Number of outputs | 4 |
| Rise Time | 10ns |
| Pin Count | 20 |
| Minimum Supply Voltage | 15V |
| Number of Drivers | 4 |
| Fall Time | 10ns |
| Driver Type | MOSFET |
Key Features
- Supports high performance with 15V minimum and maximum supply voltage.
- Features fast switching with rise and fall times of 10ns.
- Operates reliably in temperatures ranging from -40°C to 85°C.
- Intended for Half Bridge, Full Bridge, and Three Phase MOSFET or IGBT driver applications.
- Surface mount type ensuring compact PCB integration.
- Comes with 4 outputs and 4 drivers totaling 20 pins for multiple control channels.
- Compact SOIC package with dimensions 13mm x 7.6mm x 2.35mm.
Product Description
Renesas Electronics HIP4081AIBZ is a high-performance MOSFET Gate Driver designed for industrial and power management applications. The device is configured with 4 outputs and supports an output current of 2.5 A, suitable for driving MOSFET and IGBT transistors in half-bridge, full-bridge, and three-phase circuits.
It operates at supply voltages ranging from 15V minimum to 15V maximum, enabling stable and efficient power switching. The driver includes fast rise and fall times of 10 nanoseconds, which contributes to improved switching performance and reduced power loss in power conversion systems.
The component is packaged in a compact 20-pin SOIC (Small Outline Integrated Circuit) surface mount package, measuring 13mm in length, 7.6mm in width, and 2.35mm in height, allowing for efficient circuit board layout and mounting.
The operating temperature range from -40°C to 85°C makes it suitable for use in automotive, industrial, and commercial electronics environments requiring robust thermal performance.
High output current capability of 2.5 A for effective MOSFET gate driving. Four driver outputs to support complex configurations. Fast switching with 10 ns rise and fall times to optimize switching efficiency. Surface mount SOIC package for compact and reliable integration.
Wide operating temperature range suitable for harsh environmental conditions.
This MOSFET gate driver is ideal for applications in industrial power management, motor control, automotive electronics, and various semiconductor switching tasks. It enables precise and efficient control of power transistors to improve overall system reliability and performance.
Explore a comprehensive range of power management integrated circuits and MOSFET drivers at EnvMart for your next electronics project.
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Frequently Asked Questions
This model supports an output current of 2.5 A, making it suitable for driving MOSFET and IGBT transistors effectively.
It operates reliably within a temperature range of -40°C to 85°C, suitable for various industrial and automotive applications.
The driver is packaged in a compact SOIC format with dimensions of 13mm in length, 7.6mm in width, and 2.35mm in height.
This model features 4 outputs, allowing for multiple control channels in various applications.
The HIP4081AIBZ has fast rise and fall times of 10 nanoseconds, which enhances switching performance and reduces power loss.
It operates at a supply voltage of 15V, both minimum and maximum, ensuring stable performance during operation.
This model is a surface mount type, facilitating compact integration on printed circuit boards (PCBs).
It is intended for use in half-bridge, full-bridge, and three-phase MOSFET or IGBT driver applications, making it versatile for power management.
This unit includes 4 drivers, which support complex configurations in power management systems.
It belongs to the HIP4081 series, which is known for high-performance MOSFET gate driving capabilities.
The country of origin for this product is India.
The fast switching times of 10 ns contribute to improved efficiency in power conversion systems by minimizing switching losses.
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