STMicroelectronics General Purpose NPN Transistor 1 A, 80 V, 4-Pin SOT-223 BCP56-16

STMicroelectronics BCP56-16 is a high-quality general purpose NPN bipolar transistor featuring a 4-pin SOT-223 surface mount package measuring 7.3 mm in length and width, and 1.8 mm in height. This transistor is engineered to handle a maximum DC collector current of 1 A and a breakdown collector-emitter voltage of 80 V, making it highly suitable for moderate power switching and amplification applications in electronic circuits.

The device supports efficient dissipation of power up to 1.6 W, enabling reliable performance in compact PCB designs. Its NPN transistor polarity and minimum DC current gain of 25 allow it to function effectively as an amplifier or switch in various electronic projects. The transistor maintains stable operation within an ambient temperature range from 0°C to 150°C, catering to a wide range of industrial and commercial electronics environments.

Designed for surface mounting, the SOT-223 package type ensures ease of integration and soldering on standard PCBs. The transistor’s electrical limits include a maximum collector base voltage of 100 V and an emitter base voltage of 5 V, providing robustness against voltage stress in typical signal and power circuit designs.

This transistor is broadly applicable in industrial, automotive, communication, and consumer electronic systems requiring reliable bipolar transistor performance. Its configuration as a single transistor type allows flexibility for use in amplifier stages, switching circuits, or other analog electronic designs.

Supports a maximum DC collector current of 1 A allowing reliable switching performance. Can handle a maximum collector-emitter voltage of 80 V, suitable for medium voltage applications. Small surface-mount SOT-223 package with 4 pins provides easy PCB integration.

Maximum power dissipation of 1.6 W supports efficient thermal management in compact designs. Stable transistor operation from 0°C up to 150°C ensures reliable performance in variable environments. Single transistor configuration with NPN polarity for general purpose electronic circuits.

Minimum DC current gain (hFE) of 25 enables good amplification characteristics. Package dimensions approximately 7.3 mm length, 7.3 mm width, and 1.8 mm height. Rated maximum collector base voltage of 100 V and maximum emitter base voltage of 5 V.

This transistor is an essential component for electronics manufacturing, repair, and prototyping applications where medium power NPN transistors are required. EnvMart offers this product for use in a wide range of industrial, laboratory, automotive, communication, and electronic consumer device systems.

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