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Infineon CoolMOS P7 N-Channel MOSFET 18 A 600 V Enhancement Mode 3-Pin TO-220 IPA60R180P7SXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA60R180P7SXKSA1 |
| Mount Type | Through Hole |
| Series | CoolMOS P7 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
Key Features
- Employs CoolMOS P7 technology for high voltage power switching.
- Enhancement mode transistor suitable for efficient switching applications.
- Low drain-source resistance of 180 mΩ reduces conduction losses.
- Through-hole mount type provides reliable mechanical stability.
- Excellent ESD robustness greater than 2 kV (HBM).
- Robust body diode capable of hard commutation.
- Designed for low ringing tendency and outstanding switching performance.
- Package includes 3 pins facilitating easy integration.
Product Description
Infineon IPA60R180P7SXKSA1 is a high-performance CoolMOS P7 N-Channel MOSFET designed for demanding power switching applications. It delivers a maximum continuous drain current of 18 A and withstands a maximum drain-source voltage of 600 V in a reliable 3-pin TO-220 package. This transistor operates in enhancement mode and features a low on-resistance of 180 mΩ, which minimizes power losses and improves overall efficiency.
The CoolMOS P7 series utilizes a super junction technology enhancing switching speed and robustness. IPA60R180P7SXKSA1 exhibits excellent ESD robustness (> 2 kV HBM) and outstanding tolerance to hard commutation, making it suitable for hard and soft switching environments in industrial, laboratory, and power electronics systems.
The through-hole mount type allows for solid mechanical mounting and better heat dissipation. This MOSFET is ideal for incorporation in power supply units, motor controllers, and other industrial power management circuits demanding high efficiency and durability.
Features include a robust body diode and very low ringing tendency, which enhance circuit reliability and reduce electromagnetic interference. The 3-pin TO-220 package simplifies integration into various PCB layouts.
Employs CoolMOS P7 technology for high voltage power switching. Enhancement mode transistor suitable for efficient switching applications. Low drain-source resistance of 180 mΩ reduces conduction losses. Through-hole mount type provides reliable mechanical stability.
Excellent ESD robustness greater than 2 kV (HBM). Robust body diode capable of hard commutation. Designed for low ringing tendency and outstanding switching performance. Package includes 3 pins facilitating easy integration.
Compatible with industrial, power electronics, and motor control systems. Explore the range of high voltage power MOSFETs and discrete Semiconductors at EnvMart for reliable and efficient electronic component solutions.
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Frequently Asked Questions
The Infineon IPA60R180P7SXKSA1 has a maximum continuous drain current of 18 A.
This model can withstand a maximum drain-source voltage of 600 V.
The on-resistance of this MOSFET is 180 mΩ, which helps to reduce conduction losses.
It features a through-hole mount type, providing reliable mechanical stability.
This model includes 3 pins, facilitating easy integration into various PCB layouts.
The CoolMOS P7 series employs super junction technology, enhancing switching speed and robustness.
It exhibits excellent ESD robustness greater than 2 kV (HBM).
This MOSFET is suitable for power supply units, motor controllers, and industrial power management circuits.
The IPA60R180P7SXKSA1 is an N-channel MOSFET.
It features a robust body diode capable of hard commutation, enhancing circuit reliability.
The package type for this model is TO-220.
It operates in enhancement mode, making it suitable for efficient switching applications.
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