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Infineon HEXFET N-Channel MOSFET 150 A 55 V Enhancement 3-Pin TO-220 IRF1405ZPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.51mm |
| Length | 10.67mm |
| Model | IRF1405ZPBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 150A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 4.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 230W |
| Typical Gate Charge Qg @ Vgs | 120nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- This enhancement mode MOSFET features low Rds(on) of 4.9 mΩ for efficient conduction.
- Maximum power dissipation is rated at 230 W, supporting high thermal loads.
- Operating temperature ranges from -55°C to 175°C, suitable for demanding environments.
- It has a typical gate charge of 120 nC, enabling fast switching.
- Designed with a 3-pin through hole mount for robust mechanical stability.
- Forward voltage is specified at 1.3 V, optimizing performance in power applications.
- The compact dimensions are 16.51 mm height, 10.67 mm length, and 4.83 mm width.
- No automotive standard compliances but built to industrial quality.
Product Description
Infineon IRF1405ZPBF HEXFET N-Channel MOSFET is a high-current, low-voltage device tailored for power electronic circuits. Operating at a maximum continuous drain current of 150 A and a maximum drain-source voltage of 55 V, it supports demanding power switching applications.
The enhancement mode channel with a low Rds(on) of 4.9 mΩ ensures minimal conduction loss, improving system efficiency. Its maximum power dissipation of 230 W allows it to handle significant thermal loads in industrial and commercial environments.
Designed with a robust 3-pin TO-220 through-hole package, the IRF1405ZPBF offers reliable mounting and thermal management options. Its typical gate charge of 120 nC facilitates fast switching, suitable for PWM and switching power supplies.
Operating temperature ranges from -55°C to 175°C provide a wide thermal margin for industrial, laboratory, and power management use cases. The compact size with precise mechanical dimensions makes it adaptable to various PCB layouts.
Though not rated for automotive standards, this MOSFET excels in industrial, manufacturing, and power electronics boards requiring efficient, high-current switching components. This device offers low conduction losses to optimize power efficiency.
Supports high current with robust power dissipation capability. Wide operating temperature range ensures reliability. Enhancement mode makes it suitable for controlled switching applications. Compact TO-220 package for ease of use and good thermal performance.
Ideal for power management, industrial automation, and electronic equipment. EnvMart provides a comprehensive catalog of Semiconductors including Infineon MOSFETs for industrial and electronic engineering professionals seeking quality components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 150 A, making it suitable for high-current applications.
It can handle a maximum drain-source voltage of 55 V, which is ideal for various power applications.
The Rds(on) value is rated at 4.9 mΩ, ensuring minimal conduction losses during operation.
The maximum power dissipation is rated at 230 W, allowing it to manage significant thermal loads effectively.
The dimensions are 16.51 mm in height, 10.67 mm in length, and 4.83 mm in width, making it compact for various PCB layouts.
It operates within a temperature range of -55°C to 175°C, suitable for demanding environments.
This model features a through-hole mount type, providing robust mechanical stability during installation.
The typical gate charge is 120 nC, enabling fast switching capabilities for power applications.
The forward voltage is specified at 1.3 V, optimizing its performance in power applications.
The maximum gate-source voltage is rated at -20 V to +20 V, allowing for flexible control in various circuits.
This device belongs to the HEXFET series, which is designed for high-performance power electronic circuits.
No, this model is not rated for automotive standards but is built to industrial quality for various applications.
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