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Nexperia Darlington Transistor NPN 500 mA 30 V Surface Mount SOT-23 3-Pin BCV27,215
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 3mm |
| Model | BCV27,215 |
| Mount Type | Surface |
| Series | BCV27 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 500mA |
| Maximum Collector Emitter Voltage Vceo | 30V |
| Number of Elements per Chip | 2 |
| Minimum DC Current Gain hFE | 4000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 10V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1V |
| Maximum Collector Base Voltage VCBO | 40V |
| Maximum Collector Cut-off Current | 100nA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 250mW |
| Nexperia BCV27,215 2 Darlington Transistor NPN, 500 mA 30 V HFE | 4000, 3-Pin SOT-23 |
Key Features
- This transistor features a minimum DC current gain (hFE) of 4000 for high amplification.
- It comes in a compact SOT-23 surface mount package suitable for PCB applications.
- Maximum power dissipation is rated at 250 mW ensuring reliable performance.
- It supports operating temperatures from -65°C to 150°C for versatile industrial use.
- The device complies with automotive standard AEC-Q101, enhancing its reliability in automotive electronics.
- It exhibits low collector saturation voltage (max 1 V) and has a maximum emitter base voltage of 10 V.
- The transistor has two elements per chip as a Darlington pair configuration.
- Pin count of 3 facilitates easy integration in electronic circuits.
Product Description
Nexperia BCV27,215 is a high gain Darlington transistor featuring NPN polarity, designed to handle a maximum continuous collector current of 500 mA and collector emitter voltage of 30 V in a compact SOT-23 3-pin surface mount package.
This transistor provides outstanding amplification with a minimum DC current gain (hFE) of 4000, making it suitable for switching and amplifying applications in industrial, automotive, and consumer electronics.
With a maximum power dissipation of 250 mW, it meets the demands of low-power electronic circuits without overheating. It operates reliably over a broad temperature range from -65°C to 150°C, ensuring durability in various environmental conditions.
The BCV27,215 conforms to AEC-Q101 automotive standards, making it a preferred choice for automotive electronic control units and in-vehicle systems requiring high reliability and performance stability.
The device's maximum collector emitter saturation voltage is 1 V and the maximum emitter base voltage is 10 V, enabling efficient switching operations with minimal power loss. Its ultra-low collector cut-off current of 100 nA reduces leakage current, enhancing overall circuit efficiency.
Minimum DC Current Gain (hFE) of 4000 ensures high amplification. Compact SOT-23 surface mount package suits PCB assembly. Rated for 500 mA collector current and 30 V collector emitter voltage. Supports operating temperature range from -65°C to 150°C.
Automotive standard AEC-Q101 certified for enhanced reliability. Maximum power dissipation of 250 mW for efficient operation. Low collector saturation voltage (1 V) for minimal losses. Three-pin configuration with 2 elements per chip in Darlington pair.
Low leakage with maximum collector cut-off current of 100 nA.
Ideal for use in industrial circuits, automotive electronics, power management, and other general-purpose amplification and switching applications. The Nexperia BCV27,215 offers a reliable and efficient solution for designers seeking quality discrete semiconductors.
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Frequently Asked Questions
The maximum continuous collector current for this model is 500 mA.
It features a minimum DC current gain (hFE) of 4000, which allows for high amplification.
The dimensions of the SOT-23 package are 3 mm in length and 1 mm in height.
This transistor operates reliably over a temperature range from -65°C to 150°C.
The maximum collector emitter voltage (Vceo) is rated at 30 V.
It has a maximum power dissipation rating of 250 mW.
The BCV27,215 has two elements per chip as part of its Darlington pair configuration.
The maximum emitter base voltage (VEBO) is 10 V.
This model complies with the AEC-Q101 automotive standard, enhancing its reliability in automotive applications.
The maximum collector saturation voltage is 1 V.
It is an NPN type Darlington transistor, designed for high amplification and switching applications.
The maximum collector cut-off current is 100 nA, which helps to reduce leakage current.
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