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Infineon HEXFET N-Channel MOSFET, 25 A Continuous Drain Current, 55 V Maximum Drain Source Voltage, TO-252 IRLR3105TRPBF

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Infineon HEXFET N-Channel MOSFET, 25 A Continuous Drain Current, 55 V Maximum Drain Source Voltage, TO-252 IRLR3105TRPBF

Name: Infineon HEXFET N-Channel MOSFET, 25 A Continuous Drain Current, 55 V Maximum Drain Source Voltage, TO-252 IRLR3105TRPBF
Brand: Infineon
SKU: 253046
Price: 0.81 USD
Availability: InStock

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Category Semiconductor Brand Infineon Condition New

Specifications

Country of Origin	China
Brand	Infineon
Height	2.39mm
Length	6.73mm
Model	IRLR3105TRPBF
Width	6.22mm
Mount Type	Surface
Series	HEXFET
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	25A
Maximum Drain Source Voltage Vds	55V
Maximum Drain Source Resistance Rds	43mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	57W
Typical Gate Charge Qg @ Vgs	20nC
Maximum Gate Source Voltage Vgs	-16, +16V
Forward Voltage Vf	1.3V
N-Channel MOSFET, 25 A, 55 V, 3-Pin DPAK Infineon IRLR3105PBFBrand	Infineon

Key Features

Features low Rds(on) value for reduced power loss and improved efficiency.
Designed to support a maximum continuous drain current of 25 amperes.
Operates at drain-source voltages up to 55 volts ensuring reliable high-voltage application.
Compact TO-252 surface mount package enables easy PCB integration.
Provides fast switching speeds suitable for high-performance electronic devices.
Thermally stable operation up to 175°C maximum temperature.
Channel type is N with enhancement mode for effective power management.
Supports dual gate-source voltages with a maximum of -16 V to +16 V.

Product Description

Infineon IRLR3105TRPBF HEXFET N-Channel MOSFET combines high current capability with efficient power dissipation in a compact TO-252 package. It supports a maximum continuous drain current of 25 A and a maximum drain-source voltage of 55 V, making it ideal for various power electronic applications.

Its low Rds(on) resistance of 43 mΩ ensures minimal conduction losses and helps maintain thermal efficiency under load. The MOSFET operates reliably across a broad temperature range from -55°C to 175°C, allowing deployment in harsh environments.

Designed for surface mount applications, the device's TO-252 package offers ease of assembly on PCBs with surface soldering techniques such as vapor phase, infrared, or wave soldering.

Key performance parameters include a typical gate charge of 20 nC and a dual gate-source voltage capability ranging from -16 V to +16 V, providing flexibility and fast switching speeds which are essential for regulating power in automation, industrial machinery, battery management systems, and DC-DC converters.

This MOSFET finds use in industrial, manufacturing, automation, and power management contexts where efficiency and reliable switching performance are critical. Its compact form and electrical characteristics enable integration into motor drive controls and energy-efficient power circuits.

Low Rds(on) resistance for power efficiency. 25 A maximum continuous drain current rating. Maximum drain-source voltage of 55 V. Surface mount TO-252 package. Thermally stable up to 175°C operating temperature. Supports enhancement mode with N-channel type.

Dual gate-source voltage levels for switching flexibility. Typical gate charge of 20 nC. Suitable for automation and industrial equipment. Compact size with 6.73 mm length, 6.22 mm width, and 2.39 mm height. Explore more Semiconductor and MOSFET products in the Electronics & Electricals category on EnvMart for advanced electronic component solutions.