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Infineon OptiMOS N-Channel MOSFET 1.2 A 100 V Enhancement 4-Pin SOT-223 BSP296NH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | BSP296NH6327XTSA1 |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.2A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 800mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 4.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.85V |
Key Features
- Supports up to 1.2 A continuous drain current for moderate load demands.
- Has a maximum drain-source voltage of 100 V for high voltage switching.
- Equipped with a 4-pin SOT-223 surface-mount package for easy PCB integration.
- Offers 800 mΩ maximum Rds(on) reducing conduction losses under load.
- Typical gate charge of 4.5 nC allows efficient switching performance.
- Maximum power dissipation of 1.8 W for thermal management in compact assemblies.
- Wide operating temperature range from -55 °C to 150 °C ensures reliability in harsh environments.
- Gate-source voltage tolerance of ±20 V to protect the gate oxide during operation.
Product Description
Infineon BSP296NH6327XTSA1 is an OptiMOS series N-Channel MOSFET designed for efficient switching and control in automotive and industrial contexts. It operates at a maximum continuous drain current of 1.2 A and with a drain-source voltage rating of 100 V. The device uses an enhancement channel mode and is housed in a 4-pin SOT-223 surface-mount package facilitating single-sided thermal conduction and simple PCB footprint integration.
This MOSFET's 800 mΩ maximum drain-source resistance reduces conduction losses, while the typical gate charge of 4.5 nC supports faster switching times, making it suitable for PWM applications and efficient power regulation.
The device manages up to 1.8 W of power dissipation supporting compact assembly thermal requirements, and its wide operating temperature range from -55 °C to 150 °C ensures robust performance in demanding environments. It also features a gate-source voltage tolerance of ±20 V to ensure gate oxide reliability.
Applications include automotive control modules requiring AEC-Q101 qualification, DC/DC converter stages in compact power supplies, low-power motor driver circuits, battery management systems, and power distribution tasks. Its suitability for switch-mode regulation makes it ideal for portable and embedded equipment.
Supports up to 1.2 A continuous drain current for moderate load demands. Has a maximum drain-source voltage of 100 V for high voltage switching. Equipped with a 4-pin SOT-223 surface-mount package for easy PCB integration.
Offers 800 mΩ maximum Rds(on) reducing conduction losses under load. Typical gate charge of 4.5 nC allows efficient switching performance. Maximum power dissipation of 1.8 W for thermal management in compact assemblies. Wide operating temperature range from -55 °C to 150 °C ensures reliability in harsh environments.
Gate-source voltage tolerance of ±20 V to protect the gate oxide during operation. Meets AEC-Q101 automotive standard for quality and durability.
This MOSFET integrates seamlessly into automotive and industrial electronic designs requiring reliable high-voltage switching and moderate current handling capabilities. Explore further products in the Semiconductor category at EnvMart for comprehensive power management solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.2 A, suitable for moderate load demands.
It has a maximum drain-source voltage rating of 100 V, enabling high voltage switching applications.
This model is housed in a 4-pin SOT-223 surface-mount package, facilitating easy PCB integration.
The maximum drain-source resistance (Rds(on)) is 800 mΩ, which helps reduce conduction losses under load.
It features a typical gate charge of 4.5 nC, which supports efficient switching performance.
The maximum power dissipation is 1.8 W, which aids in thermal management for compact assemblies.
It operates within a wide temperature range from -55 °C to 150 °C, ensuring reliability in harsh environments.
This model meets the AEC-Q101 automotive standard, ensuring quality and durability for automotive applications.
The gate-source voltage tolerance is ±20 V, which protects the gate oxide during operation.
The dimensions of this model are 6.5 mm in length, 3.5 mm in width, and 1.6 mm in height.
It is suitable for applications such as automotive control modules, DC/DC converters, low-power motor drivers, and battery management systems.
This model uses an N-channel type, which is designed for enhancement mode operation.
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