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Infineon Isolated HEXFET P-Channel MOSFET 3.4 A 55 V Enhancement 8-Pin SOIC IRF7342TRPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF7342TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.4A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 170mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 26nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
| Transistor Configuration | Isolated |
Key Features
- Maximum continuous drain current of 3.4 A ensures robust power handling.
- Drain-source voltage rating up to 55 V allows usage in moderate voltage applications.
- Surface mount SOIC 8-pin package supports compact and efficient PCB layouts.
- Low maximum drain-source resistance (Rds) of 170 mΩ reduces conduction losses.
- Operating temperature range from -55°C to 150°C provides reliable performance in harsh environments.
- Enhancement mode transistor configuration suitable for switching and amplification.
- Typical gate charge of 26 nC at Vgs promotes fast switching.
- Gate-source voltage tolerance of ±20 V enhances operational safety.
Product Description
Infineon IRF7342TRPBF is an isolated HEXFET power MOSFET designed for efficient power management in electronic systems. This P-channel enhancement mode MOSFET supports a maximum continuous drain current of 3.4 A and a drain-source voltage of 55 V, making it suitable for various industrial and electronic applications including power converters, motor control, and battery management systems.
Featuring a surface mount 8-pin SOIC package, the device enables streamlined PCB assembly and compact designs. Its low maximum drain-source resistance (Rds) of 170 mΩ improves energy efficiency by reducing conduction losses. The gate charge of 26 nC ensures quick switching operation while the transistor maintains stable performance within an operating temperature range of -55°C to 150°C.
The gate-source voltage withstands up to ±20 V, protecting the device during transient conditions. The isolated transistor configuration further minimizes leakage currents and cross-interference, improving circuit reliability. Dimensions are optimized at 5 mm length, 4 mm width, and 1.5 mm height for flexible integration.
Maximum continuous drain current of 3.4 A ensures robust power handling. Drain-source voltage rating up to 55 V allows usage in moderate voltage applications. Surface mount SOIC 8-pin package supports compact and efficient PCB layouts.
Low maximum drain-source resistance (Rds) reduces conduction losses. Wide temperature operational range from -55°C to 150°C allows diverse environmental use. Enhancement mode P-channel transistor suitable for switching and amplification.
Typical gate charge of 26 nC for fast and efficient switching. Gate-source voltage tolerance ±20 V ensures device safety under transient loads. Isolated transistor configuration minimizes parasitic effects for stability.
Compact housing dimensions: 5 mm x 4 mm x 1.5 mm.
This MOSFET is widely applicable to industrial power management circuits, automation control equipment, motor drivers, and energy efficient electronic systems. Its electrical and mechanical specifications make it ideal for engineers seeking a reliable, high-performance P-channel MOSFET solution.
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Frequently Asked Questions
The maximum continuous drain current of this model is 3.4 A.
It has a drain-source voltage rating of up to 55 V, suitable for moderate voltage applications.
The dimensions of this MOSFET are 5 mm in length, 4 mm in width, and 1.5 mm in height.
This unit uses a surface mount SOIC 8-pin package, allowing for compact PCB layouts.
The maximum drain-source resistance (Rds) is 170 mΩ, which helps reduce conduction losses.
The typical gate charge at Vgs is 26 nC, promoting fast switching operations.
It operates within a temperature range from -55°C to 150°C, making it suitable for harsh environments.
The gate-source voltage tolerance is ±20 V, enhancing operational safety during transient conditions.
This model features an isolated transistor configuration, which minimizes leakage currents and cross-interference.
It is suitable for various applications including power converters, motor control, and battery management systems.
This MOSFET has 8 pins, facilitating its integration into electronic circuits.
This model belongs to the HEXFET series, designed for efficient power management.
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