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WeEn Semiconductors Co., Ltd NPN Transistor 4 A 400 V TO-220 Package 3-Pin PHE13005,127
Specifications
| Country of Origin | China |
|---|---|
| Brand | WeEn Semiconductors Co., Ltd |
| Height | 21mm |
| Length | 10.3mm |
| Model | PHE13005,127 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 400V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 9V |
| Maximum Collector Base Voltage VCBO | 700V |
| Maximum Power Dissipation Pd | 75W |
| Maximum DC Collector Current Idc | 4A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 60Hz |
Key Features
- Maximum DC collector current of 4 amperes, suitable for medium power applications.
- High collector-emitter voltage rating of 400 volts ensuring robustness.
- Through-hole mount type providing reliable mechanical strength.
- Maximum power dissipation of 75 watts to handle substantial heat loads.
- Low minimum DC current gain of 10 enabling use in switching and amplification.
- Operating temperature up to 150 degrees Celsius for high-temperature environments.
- Single transistor configuration with NPN polarity for standard bipolar transistor circuits.
- High maximum collector base voltage of 700 volts for improved voltage handling.
Product Description
WeEn Semiconductors Co., Ltd PHE13005,127 NPN Transistor is a high voltage, high power discrete bipolar transistor housed in a 3-pin TO-220 package. It supports a maximum DC collector current of 4 A and collector-emitter voltage of 400 V, making it suitable for industrial and power management applications in electronics.
The transistor features a through-hole mount type, providing strong mechanical stability on printed circuit boards. With a maximum power dissipation of 75 W, it can manage significant thermal loads during operation, ensuring reliability in demanding environments.
This device is designed with a minimum DC current gain (hFE) of 10, allowing efficient switching and amplification tasks. Its operating temperature range up to 150°C accommodates high-temperature applications found in industrial electronics, automotive electronics, and power control circuits.
Compact package dimensions (10.3 mm length, 21 mm height, 4.7 mm width) allow for easy integration in compact designs. The transistor's configuration is single with NPN polarity, widely utilized for general-purpose switching and amplification roles.
The high collector base voltage rating of 700 V and emitter base voltage of 9 V confirm its suitability for high voltage circuit designs. This semiconductor device originates from China and is offered in a new product condition.
Maximum DC collector current of 4 A. Collector-emitter voltage rating of 400 V. Through-hole mounting configuration. 75 W power dissipation capability. Minimum DC current gain of 10. Operating temperature limit of 150°C.
Compact dimensions suitable for versatile applications. Single NPN transistor configuration. High collector base voltage rating of 700 V.
This transistor is ideal for use in industrial, manufacturing, power electronics, and automotive control systems. Browse the wide range of Bipolar Transistors to find components suited for your high power and high voltage electronic circuit needs on EnvMart.
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Frequently Asked Questions
The maximum DC collector current for this model is 4 amperes.
It has a collector-emitter voltage rating of 400 volts.
This transistor features a through-hole mounting configuration, providing reliable mechanical strength.
The maximum power dissipation capability is 75 watts, allowing it to handle significant thermal loads.
It can operate at temperatures up to 150 degrees Celsius.
The minimum DC current gain (hFE) is 10, enabling efficient switching and amplification tasks.
The transistor has compact dimensions of 10.3 mm in length, 21 mm in height, and 4.7 mm in width.
This model has a single NPN transistor configuration, commonly used for general-purpose applications.
The maximum collector base voltage rating is 700 volts, enhancing its voltage handling capabilities.
The maximum emitter base voltage (VEBO) for this transistor is 9 volts.
This transistor is suitable for industrial, manufacturing, power electronics, and automotive control systems.
This transistor originates from China.
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