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STMicroelectronics NPN Transistor 500 mA 300 V 3-Pin DPAK Surface Mount MJD340T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 10.1mm |
| Length | 6.6mm |
| Model | MJD340T4 |
| Width | 2.4mm |
| Mount Type | Surface |
| Series | MJD340 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | 0°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 300V |
| Minimum DC Current Gain hFE | 30 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 3V |
| Maximum Collector Base Voltage VCBO | 300V |
| Maximum Power Dissipation Pd | 15W |
| Maximum DC Collector Current Idc | 500mA |
| Transistor Configuration | Single |
Key Features
- Supports a maximum DC collector current of 500 mA.
- Maximum collector-emitter voltage rating of 300 V for high-voltage applications.
- Surface mount TO-252 (DPAK) package suitable for compact PCB layouts.
- Maximum power dissipation of 15 W ensuring reliable operation under load.
- Minimum DC current gain (hFE) of 30 for effective signal amplification.
- Operates over a wide temperature range from 0°C to 150°C.
- Designed as a single NPN transistor configuration optimized for power applications.
- Maximum collector-base voltage (VCBO) of 300 V and emitter-base voltage (VEBO) of 3 V.
Product Description
STMicroelectronics MJD340T4 is a high-performance NPN bipolar power transistor designed for applications requiring a maximum collector current of 500 mA and a collector-emitter voltage up to 300 V. It is housed in a TO-252 (DPAK) surface mount package providing compact and reliable mounting on printed circuit boards.
This single transistor offers a minimum DC current gain (hFE) of 30 and supports a maximum power dissipation of 15 W, making it ideal for power amplification and switching tasks in electronic circuits.
The transistor operates efficiently across a temperature range from 0°C to 150°C, suitable for industrial and commercial electronic applications. The device’s compact size with dimensions of 6.6 mm length, 2.4 mm width, and 10.1 mm height facilitates integration into modern PCB layouts where space is limited.
STMicroelectronics’ MJD340T4 features maximum collector-base voltage (VCBO) and emitter-base voltage (VEBO) ratings of 300 V and 3 V respectively, ensuring robustness in high-voltage circuits.
This transistor is widely applicable in power management, signal switching, industrial control, and other general-purpose electronics requiring reliable NPN transistor performance.
Supports a maximum DC collector current of 500 mA. Maximum collector-emitter voltage rating of 300 V for high-voltage applications. Surface mount TO-252 (DPAK) package suitable for compact PCB layouts. Maximum power dissipation of 15 W ensuring reliable operation under load.
Minimum DC current gain (hFE) of 30 for effective signal amplification. Operates over a wide temperature range from 0°C to 150°C. Designed as a single NPN transistor configuration optimized for power applications. Compact dimensions: length 6.6 mm, width 2.4 mm, height 10.1 mm.
Maximum collector-base voltage (VCBO) of 300 V and emitter-base voltage (VEBO) of 3 V. 3-pin count ensures ease of mounting and connectivity in circuit designs. Explore the complete range of STMicroelectronics Bipolar Transistors for all your electronic circuit needs at EnvMart.
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Frequently Asked Questions
The MJD340T4 supports a maximum DC collector current of 500 mA.
It has a maximum collector-emitter voltage rating of 300 V, suitable for high-voltage applications.
This transistor is housed in a TO-252 (DPAK) surface mount package, which is suitable for compact PCB layouts.
The maximum power dissipation for this model is 15 W, ensuring reliable operation under load.
It has a minimum DC current gain (hFE) of 30, which is effective for signal amplification.
This model operates efficiently over a temperature range from 0°C to 150°C.
It has dimensions of 6.6 mm in length, 2.4 mm in width, and 10.1 mm in height.
This model is designed as a single NPN transistor configuration optimized for power applications.
The maximum collector-base voltage (VCBO) rating for this transistor is 300 V.
It has a maximum emitter-base voltage (VEBO) of 3 V.
This model features a 3-pin count, ensuring ease of mounting and connectivity in circuit designs.
The MJD340T4 is manufactured in India.
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