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Taiwan Semiconductor 1-Element Uni-Directional TVS Diode 600 W, 2-Pin DO-214 SMBJ11A
Specifications
| Country of Origin | India |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 2.15mm |
| Length | 4.75mm |
| Model | SMBJ11A |
| Width | 3.95mm |
| Mount Type | Surface |
| Series | SMBJ |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-214 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | FBI |
| Pin Count | 2 |
| Number of Elements per Chip | 1 |
| Clamping Voltage VC | 18.2V |
| Diode Configuration | Single |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 12.2V |
| Maximum Reverse Stand-off Voltage Vwm | 11V |
| Peak Pulse Power Dissipation Pppm | 600W |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 33A |
| Maximum Reverse Leakage Current | 5μA |
Key Features
- Designed for surface mounting in electronic circuits.
- Single diode configuration with uni-directional direction type.
- Minimum breakdown voltage of 12.2 V and maximum reverse stand-off voltage of 11 V.
- Clamping voltage of 18.2 V ensures excellent surge protection.
- Operates reliably from -55°C to 150°C ambient temperatures.
- Peak pulse current rating up to 33 A for transient voltage suppression.
- Glass-passivated junction with low incremental surge resistance providing fast response time.
- Meets FBI standards with flammability classification UL94V-0.
Product Description
Taiwan Semiconductor SMBJ11A is a high-performance 1-element uni-directional Transient Voltage Suppressor (TVS) diode designed to protect sensitive electronic circuits from transient overvoltage events. This diode offers a peak pulse power dissipation of 600 W and is housed in a compact 2-pin DO-214 surface mount package, facilitating easy integration in electronic assemblies.
The device features a minimum breakdown voltage (Vbr) of 12.2 V and a maximum reverse stand-off voltage (Vwm) of 11 V, delivering robust protection against voltage spikes. The clamping voltage of 18.2 V ensures effective limiting of transient voltages, safeguarding circuits from damage.
Its operating temperature range from -55°C to 150°C allows stable performance in harsh environments typical in industrial, automotive, manufacturing, and power management systems. The diode’s glass-passivated junction design provides excellent clamping capability and fast response time, essential for transient voltage suppression.
With a peak pulse current rating (Ippm) of 33 A and very low maximum reverse leakage current of 5 μA, SMBJ11A minimizes wear on circuits while providing dependable surge protection. Its small form factor - length 4.75 mm, width 3.95 mm, and height 2.15 mm - makes it suitable for compact PCB designs.
Designed for protection of sensitive electronics against voltage transients. High peak pulse power dissipation of 600 W. Robust clamping voltage and breakdown voltage specifications. Wide operating temperature range from -55°C to 150°C.
Compact DO-214 surface mount package. Fast response time with low incremental surge resistance. Meets UL94V-0 flammability rating ensuring safety in electrical applications. Ideal for use in industrial, automotive, power management, and manufacturing applications.
Glass-passivated junction for increased reliability.
This Taiwan Semiconductor TVS diode SMBJ11A is a reliable choice for transient voltage suppression tasks, ensuring longevity and protection of electronic systems. Explore other semiconductor products and TVS Diode variants at EnvMart for comprehensive solutions.
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Frequently Asked Questions
The SMBJ11A has a peak pulse power dissipation of 600 W, making it suitable for transient voltage suppression applications.
This model operates reliably within a temperature range of -55°C to 150°C, allowing it to function in harsh environments.
The SMBJ11A measures 4.75 mm in length, 3.95 mm in width, and 2.15 mm in height, making it compact for PCB designs.
The clamping voltage of the SMBJ11A is 18.2 V, which ensures effective limiting of transient voltages.
The maximum reverse stand-off voltage (Vwm) for the SMBJ11A is 11 V, providing robust protection against voltage spikes.
This diode features a single element configuration, designed for uni-directional operation.
The maximum peak pulse current rating for this model is 33 A, which helps in transient voltage suppression.
The SMBJ11A is housed in a DO-214 surface mount package, facilitating easy integration into electronic assemblies.
The minimum breakdown voltage (Vbr) of this diode is 12.2 V, ensuring effective protection against overvoltage events.
This diode meets FBI standards and has a flammability classification of UL94V-0, ensuring safety in electrical applications.
The maximum reverse leakage current for the SMBJ11A is 5 μA, minimizing wear on circuits during operation.
This TVS diode is suitable for protecting sensitive electronics in industrial, automotive, power management, and manufacturing applications.
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