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| Country of Origin | India |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 2.45mm |
| Length | 4.75mm |
| Model | SMBJ12A |
| Width | 3.95mm |
| Mount Type | Surface |
| Series | SMBJ |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-214 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | FBI |
| Pin Count | 2 |
| Number of Elements per Chip | 1 |
| Clamping Voltage VC | 19.9V |
| Diode Configuration | Single |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 13.3V |
| Maximum Reverse Stand-off Voltage Vwm | 12V |
| Peak Pulse Power Dissipation Pppm | 600W |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 30.2A |
| Maximum Reverse Leakage Current | 5μA |
Taiwan Semiconductor SMBJ12A is a high-performance 1-element uni-directional Transient Voltage Suppressor (TVS) diode designed for surface mount applications. It delivers a peak pulse power dissipation of 600 W in a compact DO-214 package, making it ideal for protecting sensitive electronic circuits from voltage transients and surges.
The device features a minimum breakdown voltage of 13.3 V and a maximum reverse stand-off voltage of 12 V, allowing it to clamp transient voltages effectively at 19.9 V clamping voltage. With a peak pulse current rating of 30.2 A, this diode can handle substantial transient surges without degradation.
Operating reliably across a temperature range of -55°C up to 150°C, the SMBJ12A ensures durable protection in harsh industrial, automotive, and consumer electronic environments. Its low maximum reverse leakage current of 5 microamps helps minimize power consumption during normal operation.
This TVS Diode is widely used in circuits requiring surge suppression including power supplies, communications equipment, and industrial controllers. The surface mount DO-214 package optimizes space on densely populated printed circuit boards.
Compact 2-pin surface mount DO-214 package for efficient PCB layout. Single diode configuration for uni-directional transient voltage suppression. 13.3 V minimum breakdown voltage to protect delicate components. Peak pulse power rating of 600 W for strong surge capability.
Broad operational temperature from -55°C to 150°C ensures versatile deployment. Low leakage current of 5 μA enhances power efficiency in standby. Conforms to FBI quality standards for assured reliability. Applicable in industrial, laboratory, automotive, and commercial electronics.
This product is essential for engineers and technicians seeking robust protection against electrical transients in demanding electronic systems. Explore the range of Taiwan Semiconductor components at EnvMart for reliable semiconductor solutions.
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