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Taiwan Semiconductor 1-Element Uni-Directional TVS Diode 600W 2-Pin DO-214 SMBJ120A

Category TVS Diode Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin India
Brand Taiwan Semiconductor
Height 2.45mm
Length 4.75mm
Model SMBJ120A
Width 3.95mm
Mount Type Surface
Series SMBJ
Maximum Operating Temperature 150°C
Package Type DO-214
Minimum Operating Temperature -55°C
Standards/Approvals FBI
Pin Count 2
Number of Elements per Chip 1
Clamping Voltage VC 193V
Diode Configuration Single
Direction Type Uni-Directional
Minimum Breakdown Voltage Vbr 133V
Maximum Reverse Stand-off Voltage Vwm 120V
Peak Pulse Power Dissipation Pppm 600W
Test Current It 1mA
Maximum Peak Pulse Current Ippm 3.1A
Maximum Reverse Leakage Current 5μA

Key Features

  • This diode features a single element uni-directional configuration.
  • It includes a 2-pin DO-214 package type suitable for SMT mounting.
  • The device has a minimum breakdown voltage of 133 V and a maximum reverse stand-off voltage of 120 V.
  • Operates over a temperature range of -55°C to 150°C for versatile industrial use.
  • Provides excellent clamping voltage at 193 V and a maximum peak pulse current of 3.1 A.
  • Designed with glass-passivated junction for enhanced reliability and fast response time.
  • Compact dimensions of 4.75 mm length, 3.95 mm width, and 2.45 mm height allow for space-efficient PCB design.
  • This diode complies with FBI standards and is not automotive certified.

Product Description

Taiwan Semiconductor SMBJ120A is a highly reliable 1-element uni-directional Transient Voltage Suppressor (TVS) diode ideal for protecting sensitive electronic components against voltage surges. Engineered for surface mount technology (SMT) applications, it offers a peak pulse power dissipation of 600 W with excellent clamping ability at a voltage of 193 V.

The SMBJ120A diodes maintain operation within a temperature range from -55°C up to 150°C, ensuring durability in demanding industrial, electronic, and manufacturing environments. This diode package type DO-214 is compact, measuring 4.75 mm in length, 3.95 mm in width, and 2.45 mm in height, suitable for space-constrained PCB layouts.

Featuring a glass-passivated junction design, it provides excellent surge handling and low incremental surge resistance for fast response time and long operational life. The device is configured with a 2-pin layout facilitating easy PCB integration.

Key technical specifications include a minimum breakdown voltage of 133 V, maximum reverse stand-off voltage of 120 V, maximum peak pulse current of 3.1 A, and a minimal maximum reverse leakage current of 5 μA, optimizing device stability and energy efficiency during transient events.

This TVS Diode is widely applicable in industrial electronics, power supplies, telecommunications, consumer electronics, and protection circuits requiring effective transient voltage suppression to enhance device longevity and safety.

This diode provides 600 W peak pulse power dissipation suited for transient voltage suppression. Operates reliably within a wide temperature range from -55°C to 150°C. Designed with a robust glass-passivated junction for long-term durability and protection.

Compact surface mount DO-214 package facilitates efficient PCB designs. Clamping voltage of 193 V supports effective surge voltage control during transient events. Explore more high-quality semiconductors and protective diodes in the EnvMart Electronics & Electricals catalog for your design and manufacturing needs.

Taiwan Semiconductor 1-Element Uni-Directional TVS Diode 600W 2-Pin DO-214 SMBJ120A
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Frequently Asked Questions

The maximum peak pulse power dissipation of this diode is 600 W.

The clamping voltage of this model is 193 V.

It operates reliably within a temperature range of -55°C to 150°C.

The minimum breakdown voltage is 133 V.

This diode comes in a DO-214 package type suitable for surface mount technology (SMT).

This model features a 2-pin configuration.

The maximum reverse stand-off voltage is 120 V.

The maximum peak pulse current is 3.1 A.

The height of this diode is 2.45 mm.

The dimensions are 4.75 mm in length, 3.95 mm in width, and 2.45 mm in height.

It features a single element uni-directional configuration.

This diode complies with FBI standards.

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