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Infineon High Voltage High Speed Power MOSFET and IGBT Gate Driver 2.5A 16-Pin 10V DSO 2ED2110S06MXUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | 2ED2110S06MXUMA1 |
| Mount Type | Board |
| Series | 2ED |
| Output Current | 2.5A |
| Maximum Operating Temperature | 125°C |
| Package Type | DSO |
| Minimum Operating Temperature | -40°C |
| Rise Time | 35ns |
| Standards/Approvals | RoHS Compliant |
| Pin Count | 16 |
| Automotive Standard | AEC-Q100 |
| Minimum Supply Voltage | 10V |
| Fall Time | 17ns |
| Driver Type | General Purpose |
Key Features
- High voltage and high speed MOSFET and IGBT driver optimized for ruggedness.
- Independent high and low side referenced output channels with noise immunity.
- Integrated ultra-fast, low resistance bootstrap diode supports bootstrap operation.
- Independent undervoltage lockout for both high and low side channels enhances reliability.
- 50% lower level-shift losses reduce power dissipation.
- Operating temperature range from -40°C to 125°C suitable for harsh environments.
- Compliant with automotive standard AEC-Q100 ensuring automotive grade quality.
- DSO package designed for board mounting in compact spaces.
Product Description
Infineon 2ED2110S06MXUMA1 is a high voltage, high speed power MOSFET and IGBT gate driver designed for industrial and automotive applications. It features independent high and low side referenced output channels providing excellent ruggedness and noise immunity, including operation at negative voltages without parasitic latch-up risks due to the absence of parasitic Thyristor structures.
The device integrates an ultra-fast, low resistance bootstrap diode and is optimized for bootstrap operation. Independent undervoltage lockout circuits on both channels improve system stability and protect against undervoltage conditions. It has 50% lower level-shift losses, minimizing power dissipation and enhancing efficiency.
Designed for board mounting, the 16-pin DSO package offers compact footprint suitable for space-constrained layouts. The gate driver operates at a minimum supply voltage of 10V, with output current of 2.5A and fast switching times of 17ns fall time and 35ns rise time.
Its industrial temperature range (-40°C to 125°C) and compliance with AEC-Q100 automotive standards make it ideal for automotive electronic control units and power management systems. The device is RoHS compliant, ensuring it meets environmental and safety standards.
Typical applications include driving power MOSFETs and IGBTs in motor drives, power converters, and industrial automation systems. Infineon's 2ED2110S06MXUMA1 gate driver ensures reliable, high performance switching in demanding conditions.
High voltage, high speed power MOSFET and IGBT gate driver. Independent high and low side output channels for rugged operation. Integrated bootstrap diode for efficient bootstrap operation. Undervoltage lockout protection for both channels.
Reduced level-shift losses for lower power consumption. Wide temperature range from -40°C to 125°C. Automotive AEC-Q100 standard compliant. Compact 16-pin DSO package for board mounting. RoHS compliant manufacturing process.
Explore the complete range of Gate Drivers and power management ICs at EnvMart for your industrial, automotive, and electronics design requirements.
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Frequently Asked Questions
The output current of this gate driver is 2.5A.
It operates within a temperature range of -40°C to 125°C.
The rise time for this gate driver is 35ns.
The fall time is specified at 17ns.
The minimum supply voltage for this gate driver is 10V.
It is available in a 16-pin DSO package designed for board mounting.
Yes, it is compliant with the AEC-Q100 automotive standard.
The integrated bootstrap diode is ultra-fast and has low resistance, optimizing it for bootstrap operation.
It is suitable for driving power MOSFETs and IGBTs in motor drives, power converters, and industrial automation systems.
The independent high and low side referenced output channels are designed for rugged operation and noise immunity.
The independent undervoltage lockout circuits on both channels enhance system stability and protect against undervoltage conditions.
It is manufactured in India.
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